A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments

Edwards, C.; Redman-White, W.; Bracey, M.; Tenbroek, B.M.; Lee, M.S.L.; Uren, Michael J.

doi:10.1109/4.772408

Cited by 15 publications

(4 citation statements)

References 19 publications

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“…As technical limitations do not permit the fabrication of annular devices, polygonal structures with eight sides (n = 8) resembling an annular shape were fabricated and used for comparison. The chip consists of an array of 72 NMOS transistors of different types and different [W/L] eff ratios, which were calculated using (3). All the transistors have the bulk connected to ground, and independent pads were used to access each transistor's terminals using Ground-Signal-Ground probes.…”

Section: Resultsmentioning

confidence: 99%

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A 2D model for radiation-hard CMOS annular transistors

López¹,

Blanco-Filgueira²,

Pardo³

et al. 2009

Semicond. Sci. Technol.

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Scaling benefits of CMOS processes include the reduction of the oxide thickness, which in turn favors the reduction of threshold voltage shifts due to radiation-induced gate oxide trapped charge. Moreover, experimental results have shown that this inherent radiation hardness of deep submicron processes can be further exploited using gate-enclosed layout transistors with an annular design. For an in-depth analysis of such structures, we present in this paper a 2D analytical I-V model for short-channel annular devices based on the direct solution of the Poisson equation in cylindrical coordinates. The theoretical approach is confirmed with experimental data in a standard CMOS 0.18 μm process.

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Section: Resultsmentioning

confidence: 99%

“…Traditionally, radiation-hard integrated circuits have been fabricated in silicon-on-insulator (SOI) or silicon-onsaphire (SOS) technologies due to their robustness against single events upsets (SEU) and irradiation triggered latchup (SEL), [3].…”

Section: Introductionmentioning

confidence: 99%

A 2D model for radiation-hard CMOS annular transistors

López¹,

Blanco-Filgueira²,

Pardo³

et al. 2009

Semicond. Sci. Technol.

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“…10 Because total dose effects are bias-dependent, two matched transistors will degrade at different rates if biased at different average voltages. When multiplied by a large voltage gain, increasing radiation-induced offsets between MOSFETs can cause failures in differential amplifiers, comparators, and bias circuits.…”

Section: Total Dose Hardeningmentioning

confidence: 99%

“…The solution (Figure 2 More sophisticated circuit techniques can also be utilized to maintain the functionality of high-performance analog circuits. 10 Switched capacitor circuits can be used to cancel or balance radiation-induced offset voltages in amplifiers and comparators. Charge pump circuits and bulk-source biasing circuits can be used to compensate for changes in threshold voltages in processes where transistor wells can be individually isolated.…”

Section: Total Dose Hardeningmentioning

confidence: 99%

Radiation-Tolerant Design for High Performance Mixed-Signal Circuits

Holman

2004

Int. J. Hi. Spe. Ele. Syst.

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Modern semiconductor processes can provide significant intrinsic hardness against radiation effects in digital and analog circuits. Current design techniques using commercial processes for radiation-tolerant integrated circuits are summarized, with an emphasis on their application in high performance mixedsignal circuits and systems. Examples of "radiation hardened by design" (RHBD) methodologies are illustrated for reducing the vulnerability of circuits and components to total dose, single-event, and doserate effects.The evolution of semiconductor processes has resulted in a growing emphasis in "system on chip" applications where digital, analog, and even RF circuits are combined together on the same substrate. Circuit designers now have access to three categories of high-performance IC processes that are suitable for mixed-signal RHBD applications. Bulk CMOS, silicon-on-70 Int. J. Hi. Spe. Ele. Syst. 2004.14:353-366. Downloaded from www.worldscientific.com by CHINESE UNIVERSITY OF HONG KONG on 02/04/15. For personal use only.

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Analog Circuit Design for SOI

Marshall

2012

Advanced Circuits for Emerging Technologies

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A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments

Cited by 15 publications

References 19 publications

A 2D model for radiation-hard CMOS annular transistors

A 2D model for radiation-hard CMOS annular transistors

Radiation-Tolerant Design for High Performance Mixed-Signal Circuits

Analog Circuit Design for SOI

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