A nano-ampere current reference circuit in a 0.5 μm CDMOS technology

Ding, Liqiang; Wang, Yang; Bao, Zhanying; Liao, Hank; Jin, Xiangliang

doi:10.1016/j.mejo.2019.02.003

Cited by 9 publications

(3 citation statements)

References 5 publications

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“…According to the analysis in Ref. [5], the temperature coe cients of I L , V G and I CQ1 are equal, and the relative temperature coe cient of I L can be obtained by formula (3):…”

Section: Current-limiting Protectionmentioning

confidence: 99%

“…However, with the improvement of chip integration, the miniaturization of smart power integrated circuits through innovative design has important engineering application signi cance. In addition, the traditional current sampling circuit usually adopts the resistance series sampling method [4][5][6]. The structure of this method is quite simple, but the power loss of the sampling resistor is unavoidable and therefore it will reduce the e ciency, especially in the case of larger current.…”

Section: Introductionmentioning

confidence: 99%

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Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch

Gao¹,

Cai²,

Hao

et al. 2022

Preprint

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Based on 0.35μm BCD process, a current-limiting and short-circuit protection circuit for low-side power switch is proposed. This design adopts the compact current comparator structure to achieve 2A current limiting protection and short circuit protection for the power switch over the temperature range of -25°C to 150°C, while quiescent power consumption is only 55.8μw. The sense-FET technology of this design can achieve 98.11% accurate current sampling. Simulation and experimental results show that when the load is lower than 7.5Ω at 18V supply voltage, the current-limiting protection is triggered to limit the output current to 2A. When the load is short-circuited, the short-circuit protection is triggered and the entire circuit will be shut down. The power supply rejection ratio of this design is -53dB, and the average temperature coefficient is 277ppm/℃, while only occupying an area of 0.055 mm2.

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“…According to the analysis in Ref. [5], the temperature coe cients of I L , V G and I CQ1 are equal, and the relative temperature coe cient of I L can be obtained by formula (3):…”

Section: Current-limiting Protectionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch

Gao¹,

Cai²,

Hao

et al. 2022

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…3) PTAT+CTAT: they exploit the weighted sum between PTAT and CTAT current generators. The principle of the PTAT generation relies on ∆V BE /R (using BJTs); on the other hand, the CTAT temperature dependency is obtained by using the ratio between ∆V GS (or a V BE of a BJT) of NMOS transistors and a resistor [12], [14], [15], [19], [24], [27], [31], [32].…”

mentioning

confidence: 99%

A 6.3-ppm/°C, 100-nA Current Reference With Active Trimming in 28-nm Bulk CMOS Technology

2022

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This paper introduces a current reference based on ∆V GS generation principle and adopts integrated poly-p+ resistors and a nW-power OTA to reduce the line sensitivity. Implemented in a 28-nm standard CMOS technology, the circuit provides a nominal current equal to 100nA and operates down to 0.6 V with a line sensitivity equal to 1.2 %/V in the range [0.8-1.8] V and a temperature coefficient equal to 6.3 ppm/°C in the range [10-90]°C. Comparison with the state-of-the-art confirms the validity of the proposed solution and its suitability to be exploited in ultra-low-power and area-constrained applications.INDEX TERMS Current reference, low voltage, low power, area-efficient, Internet of Things, sensor nodes, implanted biomedical devices NOMENCLATURE

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A novel precision CMOS current reference for IoT systems

Lü

et al. 2021

AEU - International Journal of Electronics and Communications

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A nano-ampere current reference circuit in a 0.5 μm CDMOS technology

Cited by 9 publications

References 5 publications

Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch

Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch

A 6.3-ppm/°C, 100-nA Current Reference With Active Trimming in 28-nm Bulk CMOS Technology

A novel precision CMOS current reference for IoT systems

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A nano-ampere current reference circuit in a 0.5 μm CDMOS technology

Cited by 9 publications

References 5 publications

Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch

Novel Current-limiting and Short-circuit Protection Technology for Low-side Power Switch

A 6.3-ppm/°C, 100-nA Current Reference With Active Trimming in 28-nm Bulk CMOS Technology

A novel precision CMOS current reference for IoT systems

Contact Info

Product

Resources

About

A nano-ampere current reference circuit in a 0.5 μm CDMOS technology