A nanocapacitor with giant dielectric permittivity

Saha, Shyamal Kumar; DaSilva, Manuel; Hang, Qingling; Sands, Timothy D.; Janes, David B.

doi:10.1088/0957-4484/17/9/036

Cited by 12 publications

(8 citation statements)

References 17 publications

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“…The geometric depolarization factor vanishes for q1D symmetry, leading to giant dielectric constants ɛ which rise as the filament length increases56. This effect was recently observed in Au nanowires57, with ɛ reaching 10 7 . In Na 2− δ Mo 6 Se 6 , we therefore anticipate that the long-range Coulomb repulsion in an individual (Mo 6 Se 6 ) l filament ( l <∞) will be efficiently screened by neighbouring filaments29.…”

Section: Discussionmentioning

confidence: 63%

A disorder-enhanced quasi-one-dimensional superconductor

et al. 2016

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A powerful approach to analysing quantum systems with dimensionality d>1 involves adding a weak coupling to an array of one-dimensional (1D) chains. The resultant quasi-1D (q1D) systems can exhibit long-range order at low temperature, but are heavily influenced by interactions and disorder due to their large anisotropies. Real q1D materials are therefore ideal candidates not only to provoke, test and refine theories of strongly correlated matter, but also to search for unusual emergent electronic phases. Here we report the unprecedented enhancement of a superconducting instability by disorder in single crystals of Na2−δMo6Se6, a q1D superconductor comprising MoSe chains weakly coupled by Na atoms. We argue that disorder-enhanced Coulomb pair-breaking (which usually destroys superconductivity) may be averted due to a screened long-range Coulomb repulsion intrinsic to disordered q1D materials. Our results illustrate the capability of disorder to tune and induce new correlated electron physics in low-dimensional materials.

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Section: Discussionmentioning

confidence: 63%

A disorder-enhanced quasi-one-dimensional superconductor

et al. 2016

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“…88 and 89 for more details) present experimental data on capacitors with nanodielectrics which are reportedly characterized by gigantic k ∼ 10 7 -10 10 and a large potential in energy storage. [89][90][91] The analysis of the data does not support the expectations. In a plane capacitor, the surface charge density δ Q on atomically smooth electrodes is limited by δ Qmax ∼ 1.5 × 10 −4 C/cm 2 (an ion charge of one sign on crystallographic planes with small indices, the concentration n ≈ 10 15 cm −2 ).…”

Section: 23mentioning

confidence: 99%

A Short Review on Deep-Sub-Voltage Nanoelectronics and Related Technologies

Despotuli

Андреева

2009

Int. J. Nanosci.

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The decrease of energy consumption per 1 bit processing (ε) and power supply voltage (V dd ) of integrated circuits (ICs) are long-term tendencies in micro-and nanoelectronics. In this framework, deep-sub-voltage nanoelectronics (DSVN), i.e., ICs of ∼10 11 -10 12 cm −2 component densities operating near the theoretical limit of ε, is sure to find application in the next 10 years. In nanoelectronics, the demand on high-capacity capacitors of micron sizes sharply increases with a decrease of technological norms, ε and V dd . Creation of high-capacity capacitors of micron size to meet the challenge of DSVN and related technologies is considered. The necessity of developing all-solid-state impulse micron-sized supercapacitors on the basis of advanced superionic conductors (nanoionic supercapacitors) is discussed. Theoretical estimates and experimental data on prototype nanoionic supercapacitors with capacity density δ C ≈ 100 µF/cm 2 are presented. Future perspectives of nanoionic devices are briefly discussed.

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“…Energy storage devices such as supercapacitors and batteries have always drawn much attention for their potential applications [ 23 ]. Conventional batteries can store substantial amounts of energy but they have the drawback of their charging time that is much longer than that of a capacitor.…”

Section: Introductionmentioning

confidence: 99%

Energy Stored and Capacitance of a Circular Parallel Plate Nanocapacitor

Ciftja

2021

Nanomaterials

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Nanocapacitors have received a great deal of attention in recent years due to the promises of high energy storage density as device scaling continues unabated in the nanoscale era. High energy storage capacity is a key ingredient for many nanoelectronic applications in which the significant consumption of energy is required. The electric properties of a nanocapacitor can be strongly modified from the expected bulk properties due to finite-size effects which means that there is an increased need for the accurate characterization of its properties. In this work, we considered a theoretical model for a circular parallel plate nanocapacitor and calculated exactly, in closed analytic form, the electrostatic energy stored in the nanocapacitor as a function of the size of the circular plates and inter-plate separation. The exact expression for the energy is used to derive an analytic formula for the geometric capacitance of this nanocapacitor. The results obtained can be readily amended to incorporate the effects of a dielectric thin film filling the space between the circular plates of the nanocapacitor.

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A nanocapacitor with giant dielectric permittivity

Cited by 12 publications

References 17 publications

A disorder-enhanced quasi-one-dimensional superconductor

A disorder-enhanced quasi-one-dimensional superconductor

A Short Review on Deep-Sub-Voltage Nanoelectronics and Related Technologies

Energy Stored and Capacitance of a Circular Parallel Plate Nanocapacitor

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