A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

Guo, Jingwei; Li, Ping; Jiang, Jie; Zeng, Wei; Wang, Ruoyu; Wu, Hao; Gan, Ping; Lin, Zhi; Hu, Shengdong; Tang, Fang

doi:10.1109/ted.2022.3225121

Cited by 13 publications

(5 citation statements)

References 34 publications

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“…In this paper, Sentaurus TCAD tools are used to perform the device simulations and the compact model simulations. Standard SiC physical models are used in the simulation, including Fermi statistics, Shockley-Read-Hallre and Auger recombination, Okuto and GradQuasiFermi avalanche, incomplete dopant ionization, anisotropic material properties, and nonlocal tunneling [16,32]. The bandgap models are OldSlotboom and NoFermi.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

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A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

Zhang,

Luo,

et al. 2023

Phys. Scr.

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A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (Cgd) and gate-to-drain charge (Qgd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) and the conventional SGT MOSFET (CSGT-MOSFET), due to the reduction of the overlapping area of the split gate (SG) structure and drift region. Therefore, the obtained high frequency figure of merit (HF-FOM) defined as [Ron×Cgd] reduced by 23.9% compared with DT-MOSFET and CSGT-MOSFET. And the HF-FOM [Ron×Qgd] for the MSGT-MOSFET significantly decreased by 71% and 50%, respectively, compared to that of the DT-MOSFET and CSGT-MOSFET. Furthermore, the switching loss is also simulated and calculated. And the total switching loss of the proposed MSGT-MOSFET realizes 42.9% and 21.7% reduction in comparison with the DT-MOSFET and CSGT-MOSFET. The overall enhanced performances suggest that the MSGT-MOSFET is an excellent choice for high frequency power electronic applications.

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Section: Device Structure and Mechanismmentioning

confidence: 99%

“…The fixed charge concentration along the SiC/SiO 2 interface is 1 × 10 11 cm −2 [33]. Other parameters of the material and models are adapted according to calibrated work in [16,32,34]. Besides, we also calibrated with the [4] as shown in figure 2.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

Zhang,

Luo,

et al. 2023

Phys. Scr.

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“…However, the complexity of the device fabrication process, which includes secondary epitaxial growth, poses challenges for its current commercialization. In 2023, J. Gao et al described a recessed source trench silicon carbide MOSFET with integrated MOS-channel diode (MCD) [27]. The MCD utilizes a short channel with adjustable length by varying the recessed depth.…”

Section: Introductionmentioning

confidence: 99%

SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect

Sang,

Jin,

Cui

et al. 2024

Electronics

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A SiC fin-channel MOSFET structure (Fin-MOS) is proposed for an enhanced gate shielding effect. The gates are placed on each side of the narrow fin-channel region, while grounded p-shield regions below the gates provide a strong shielding effect. The device is investigated using Sentaurus TCAD. For a narrow fin-channel region, there is difficulty in forming an Ohmic contact to the p-base; a floating p-base might potentially store negative charges upon high drain voltage, and, thus, causes threshold voltage instabilities. The simulation reveals that, for a fin-width of 0.2 μm, the p-shield regions provide a stringent shielding effect against high drain voltage, and the dynamic threshold voltage shift (∆Vth) is negligible. Compared to conventional trench MOSFET (Trench-MOS) and asymmetric trench MOSFET (Asym-MOS), the proposed Fin-MOS boasts the lowest OFF-state oxide field and reverse transfer capacitance (Crss), while maintaining a similar low ON-resistance.

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“…[1][2][3][4] A troublesome issue is that in an inverter system, it is essential to anti-parallel a fast freewheeling diode with the SiC MOSFET for loss reduction, because of the bipolar degradation problem 5,6) as well as the high turn-on voltage (∼2.7 V) of the body diode. [7][8][9] However, the resulting increase of extra capacitance and inductance is undesirable. Recently, integrating a diode with the MOSFET in a single chip is a popular and effective method to solve this issue.…”

Section: Introductionmentioning

confidence: 99%

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Wang

Jia

Zhou

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, a novel SiC trench-gate MOSFET with integrated heterojunction diode (HD-TG-MOS) is proposed and studied according to TCAD simulations. The n-type polysilicon/n–type SiC HD is introduced into the groove by the direct contact between the polysilicon and semiconductor. As a result, significant improvements of device performance in the first and third quadrants are observed as compared to the conventional SiC trench-gate MOSFET (C-TG-MOS). Better yet, aided by the extremely low barrier height across the heterojunction, the knee voltage reduces to only 0.5 V with comparison of that of ~2.7 V for the body diode, when used for reverse freewheeling. These promotions make SiC HD-TG-MOS more advantageous for high-frequency power conversion applications. In addition, another cell architecture variant adopting a similar concept is presented, and the according process implementation is addressed as well from viewpoint of manufacture.

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A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

Cited by 13 publications

References 34 publications

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

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