A new adustable Schmitt Trigger based on Dual Control Gate-Floating Gate Transistor (DCG-FGT)

Marzaki, A.; Bidal, V.; Laffont, R.; Rahajandraibe, W.; Portal, J.M.; Bouchakour, R.

doi:10.1109/mwscas.2012.6292102

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Schmitt Trigger Design Concept1

Introduction1

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2015

2022

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Cited by 5 publications

(2 citation statements)

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“…This was suggested in 2003 by using body biasing [53]. Recently, independent tuning of the ST switching thresholds within 30% of V DD was achieved by controlling the gate terminal of dual control gate‐floating gate transistors [54]. A differential ST with tunable SNMs in 0.18 µm was proposed in [55].…”

Section: Schmitt Trigger Design Conceptmentioning

confidence: 99%

Reliability and performance of optimised Schmitt trigger gates

Tache

Ibrahim²,

Kharbash³

et al. 2018

J. eng.

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Section: Schmitt Trigger Design Conceptmentioning

confidence: 99%

Reliability and performance of optimised Schmitt trigger gates

Tache

Ibrahim²,

Kharbash³

et al. 2018

J. eng.

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“…A novel differential Schmitt circuit with adjustable hysteresis value is proposed by Yuan [7]. Recently, some Schmitt triggers using neuron-MOS devices have been investigated [8,9]. In this paper, a new design scheme of binary Schmitt trigger with n-channel neuron-MOS transistor is proposed.…”

Section: Introductionmentioning

confidence: 99%

A new schmitt trigger with n-channel neuron-MOS transistor

Hang

Zhu

2015

2015 11th International Conference on Natural Computation (ICNC)

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A new structure of voltage-mode binary Schmitt trigger with n-channel neuron-MOS device is designed. In this presented circuit scheme, the hysteresis window of the Schmitt circuit can be shifted by adjusting the value of the external control signal, and the hysteresis voltage can be verified by choosing the different ratio of capacitive coupling coefficients. Besides, the proposed Schmitt circuit has a simpler structure, in which only one n-channel neuron-MOS transistor, a pMOS transistor and one conventional CMOS inverter are required. Using HSPICE program and TSMC 0.35μm 2-ploy 4-metal CMOS process parameters, the effectiveness of the proposed neuron-MOS-based Schmitt trigger is validated. The threshold and hysteresis voltages are measured during simulation.

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