A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells

Herguth, Axel; Schubert, Gunnar; Kaes, Martin; Hahn, Giso

doi:10.1109/wcpec.2006.279611

Cited by 111 publications

(88 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a consequence, the values for activation energy and characteristic frequency given here are to be considered as minimum, respectively maximum, values because the increase in defect concentration might be slightly accelerated due to degrada tion effects that are not caused by the destabilization of 80 related defects, e.g., degradation of the SiNx:H surface passivation layer. In fact, at least 20% of the defect concentration measured after the whole destabilization process is due to defects that cannot be rendered inactive by a typical 80 annealing treatment of 10 Hence, destabilization of 80 related defects in the dark is not going to pose a major problem during the lifespan of a typical solar cell, as al ready predicted by Herguth et al [25), especially as the solar cell only reaches higher temperatures around 60 oc by ilium ina tion which in turn most probably promote a slow regeneration neutralizing the destabilization effect.…”

Section: Thennal Stabilitymentioning

confidence: 99%

“…Herguth et al have shown that active BO related defects can be transformed into a recombination inactive state being stable under solar cell operating conditions by applying a regeneration procedure consisting of a combination of carrier injection and slightly elevated temperatures [10,11]. Recent results suggest that hydrogen might be the key factor to fast regeneration processes [12,13]: It has been shown, that if more hydrogen is introduced into the silicon bulk realized e.g.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Wilking

Beckh

Ebert

et al. 2014

Solar Energy Materials and Solar Cells

Self Cite

118

View full text Add to dashboard Cite

a b s t r a c tRecombination active boron oxygen related defects typically limit the efficiency of solar cells made from boron doped, oxygen rich silicon. This limitation can be overcome by applying a regeneration process that requires slightly elevated temperatures, carrier injection, and the presence of hydrogen in the silicon substrate in order to regenerate quickly and completely.The influence of mid temperature steps up to 400 1C on the regeneration kinetics is investigated and the results can be explained with the efficacy of the regeneration process depending on the hydrogen bonding states prior to regeneration. Boron hydrogen pairs are found to be good candidates to be the relevant hydrogen source during regeneration. The long term stability of the regenerated state is tested under solar cell operating conditions, and the thermal activation energy of its destabilization is determined to be 1.25 70.05 eV.Limiting factors for high speed regeneration processes are discussed, and a high temperature/high illumination procedure is presented, allowing complete regeneration in less than 10 s. This makes regeneration feasible as an in line process in solar cell production.

show abstract

Section: Thennal Stabilitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Wilking

Beckh

Ebert

et al. 2014

Solar Energy Materials and Solar Cells

Self Cite

118

View full text Add to dashboard Cite

show abstract

“…However, both types of LID can be followed by subsequent regeneration of τ b [9]- [12] allowing for permanent curing of LID in the bulk. Once τ b is sufficiently high, surface passivation becomes the limiting factor and renders solar cells more susceptible to degradation of surface passivation.…”

Section: Introduction Lmentioning

confidence: 99%

Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments

Sperber

Graf

Skorka

et al. 2017

IEEE J. Photovoltaics

Self Cite

View full text Add to dashboard Cite

Abstract-A decrease of surface passivation quality is observed in FZ, Cz, and mc-Si lifetime samples during light-induced degradation (LID) treatments. It is shown that this degradation occurs not only in samples with single SiN x :H layers but also when using layer stacks consisting of SiO x /SiN x :H or AlO x :H/SiN x :H. Timeresolved calculation of the surface saturation current density J 0 s is shown to be a reliable method to separate changes in the bulk and at the surface of samples during LID treatments. The impact of the observed changes in passivation quality on the outcome and interpretation of LID experiments aiming at changes in the bulk of Cz or mc-Si is investigated and discussed.

show abstract

“…5 The defect is dissociated at 200 C, 6 and the degradation can be prevented by simultaneous illumination and annealing. 7 Copper is a common 3d transition metal impurity in industrial silicon solar cells, which under illumination also causes lifetime degradation (Cu-LID). [8][9][10] Hence, crystalline silicon can suffer from BO-LID, Cu-LID, or a combination of both degradation effects.…”

Section: Introductionmentioning

confidence: 99%

Formation kinetics of copper-related light-induced degradation in crystalline silicon

Lindroos

Savin

2014

Journal of Applied Physics

View full text Add to dashboard Cite

Light-induced degradation (LID) is a deleterious effect in crystalline silicon, which is considered to originate from recombination-active boron-oxygen complexes and/or copper-related defects. Although LID in both cases appears as a fast initial decay followed by a second slower degradation, we show that the time constant of copper-related degradation increases with increasing boron concentration in contrast to boron-oxygen LID. Temperature-dependent analysis reveals that the defect formation is limited by copper diffusion. Finally, interface defect density measurements confirm that copper-related LID is dominated by recombination in the wafer bulk. V C 2014 AIP Publishing LLC. [http://dx

show abstract

A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells

Cited by 111 publications

References 2 publications

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments

Formation kinetics of copper-related light-induced degradation in crystalline silicon

Contact Info

Product

Resources

About