A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform

Zhou, Jinggui; Binh, Huy; Souza, M.M. De

doi:10.1109/edtm55494.2023.10103055

Cited by 2 publications

(1 citation statement)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum degradation of I ON observed is ∼30%. Furthermore, we have shown that the figure of merit (FOM = V BV 2 /R on, sp ) can be improved by 3 times in a GaN power HEMT with the back-to-back graded AlGaN compared to the one with a conventional Al 0.25 Ga 0.75 N. 35 The impact of gate length scaling is investigated at Figure 4d demonstrates a comparison of the current density distribution from a u-GaN channel to the AlGaN barrier under the gate region (I Den. Gate ) and the access region between the gate and drain (I Den.…”

Section: ■ Methodologymentioning

confidence: 95%

Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

Zhou

Binh

Souza

2023

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off ptype metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DEG, a greater potential can be dropped across the GaN channel, resulting in enhanced electrostatic control. Therefore, to minimize the deleterious impact on the on-state performance, a composite graded back-to-back AlGaN barrier that enables a trade-off between n-channel devices and Enhancement-mode (E-mode) pchannel is investigated. In simulations, a scaled p-channel GaN device with L G = 200 nm, L SD = 600 nm achieves an I ON of 65 mA/ mm, an increase of 44.4% compared to a device with an AlGaN barrier with fixed Al mole fraction, I ON /I OFF of ∼10 12 , and |V th | of | − 1.3 V|. For the n-channel device, the back-to-back barrier overcomes the reduction of I ON induced by the p-GaN gate resulting in an I ON of 860 mA/mm, an increase of 19.7% compared with the counterpart with the conventional barrier with 0.5 V positive V th shift.

show abstract

Section: ■ Methodologymentioning

confidence: 95%

Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

Zhou

Binh

Souza

2023

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

Electrical Properties of GaN/Ga2O3 P-N Junction Diodes: A TCAD Study

Duyen-Thi Nguyen,

Khanh Nguyen,

Duc-Minh Truong

et al. 2024

JTE

View full text Add to dashboard Cite

Ga2O3 and GaN are promising candidates for the fabrication of high power semiconductor devices due to their wide band-gap range, deteremined from 3.0 eV to 4.9 eV. Among these materials, the GaN/Ga2O3 P-N junction diode has an excellent performance even at high temperatures, making it suitable for high-power applications. In this work, GaN/Ga2O3 P-N junction diodes are investigated using computer-aided design (TCAD) simulations. The properties of the diode were optimized in terms of the thickness of the p-type GaN layer and its doping concentration. It was found that the current-voltage (IV) characteristic of the diode decreases as the thickness of GaN layer increases. To achieve a high current output, the optimized thickness is determined to be 500 nm. Furthermore, the doping concentration within the diode strongly influences the output current. The highest current is obtained for an un-doped GaN sample, and the increase in the doping concentration leads to a decrease in the obtained current.

show abstract

A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform

Cited by 2 publications

References 12 publications

Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

Electrical Properties of GaN/Ga2O3 P-N Junction Diodes: A TCAD Study

Contact Info

Product

Resources

About