A new channel-doping technique for high-voltage depletion-mode power MOSFET's

Ueda, Daisuke; Shimano, Akio; Kitamura, I.; Takagi, Hiromitsu; Kano, G.

doi:10.1109/edl.1986.26384

IEEE Electron Device Lett.

1986

DOI: 10.1109/edl.1986.26384

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A new channel-doping technique for high-voltage depletion-mode power MOSFET's

Daisuke Ueda

Akio Shimano

I. Kitamura

et al.

Abstract: A new channel-doping technique for high-voltage depletionmode double-diffused MOSFET (DMOSFET) is demonstrated. The technique that is used is channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using the new technique. A 1050-V DMOSFET was experimentally fabricated with a negative threshold voltage of -2 V.

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1991

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“…Anisotropic etching of deep Si trenches have been considered as a useful technology for use in the fabrication of modern semiconductor devices such as device isolation (2), DRAM capacitor (3), and power devices (4,5). For these applications, chlorine-based plasmas have been extensively utilized for anisotropic etching of trenches.…”

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Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures

Syau

Baliga

Hamaker

1991

J. Electrochem. Soc.

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Anisotropic etching of deep trenches in single-crystal Si has been obtained using reactive ion etching with SFdO2 gas mixtures for the first time. The influence of wafer temperature, total gas pressure, and O2 content on profile control and etch selectivity (Si:SiO2) has been determined. A high anisotropy and selectivity (18:1) have been achieved at 25% O2 content. Scanning electron microscopy and Auger electron spectroscopy techniques have been used to study the trench profile and surface roughness. Methods for post-reactive ion etching surface treatment have been explored to remove surface roughness.Reactive ion etching using gas mixtures has been investigated extensively and successfully applied to the mask pattern transfer in the fabrication of semiconductor devices. Properties such as precise line width control, proper vertical profile control, and high etching selectivity have been obtained with this technique. Both ion bombardment and chemical reaction play a major role in reactive ion etching. Basically, directional etching resulting from the reaction between the active gas-phase species and the etched surface is dominated by the ion sputter etching and selectivity from the competition of different materials is determined by chemical plasma etching (1). Generally, it is difficult to achieve both high anisotropy and selectivity at the same time.Anisotropic etching of deep Si trenches have been considered as a useful technology for use in the fabrication of modern semiconductor devices such as device isolation (2), DRAM capacitor (3), and power devices (4, 5). For these applications, chlorine-based plasmas have been extensively utilized for anisotropic etching of trenches. Problems observed with this process include sharp trench corners that create reliability concerns due to field crowding and the deposition of black silicon on the surface which interferes with the etching. The fluorine-based plasmas such as SFs (6) and NF3 (7) have also been previously studied. It has been found that these gases provide a high Si etch rate and high silicon/oxide etch selectivity, but the previous reports have indicated that these methods are not suitable for formation of trenches because the etching is isotropic. Flamm et al. (8) have demonstrated that the isotropic etching behavior of these gas plasmas is due to the poor efficiency of ion bombardment in the etching reaction. A large amount of investigation for surmounting this obstacle has been proposed: the loading effect at low pressure (9), microwave multipolar plasma (10), RF double cathode (11), dilution of SFs with nonactive gases JAr (6, 12), He (13), or N2 (12, 14)], or dilution of SF6 with reactive gases [CC14, HC1 (15), CFC13, C12 (16), H2 (12), 02 (12,(17)(18)(19), C2C1F5, or CBrF3 (20)]. From these experiments, reactive ion etching with combined isotropic and anisotropic reactions has been observed for silicon. The best results for fulfilling the requirements of high anisotropy and high selectivity for the trenches have been obtained using SF6 with the addit...

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mentioning

confidence: 99%

Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures

Syau

Baliga

Hamaker

1991

J. Electrochem. Soc.

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A new channel-doping technique for high-voltage depletion-mode power MOSFET's

Cited by 1 publication

References 3 publications

Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures

Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures

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