Akio Shimano scite author profile

A new channel-doping technique for high-voltage depletionmode double-diffused MOSFET (DMOSFET) is demonstrated. The technique that is used is channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using the new technique. A 1050-V DMOSFET was experimentally fabricated with a negative threshold voltage of -2 V.

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A 4GHz 25mW GaAs IC using source coupled FET logic

Shimano

Katsu²,

Nambu³

et al. 1983

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Akio Shimano

Surface Potential and Surface State Density in Anodized GaAs MOS Capacitors

Light-controlled Anodic oxidation of n-GaAs and its application to preparation of specified active layers for MESFET's

A source coupled FET logic—A new current-mode approach to GaAs logics

A new channel-doping technique for high-voltage depletion-mode power MOSFET's

A 4GHz 25mW GaAs IC using source coupled FET logic

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