A new chromeless phase mask for the photolithography

Bauch, Lothar; Bauer, J.; Dreger, H.; Lauche, B.; Mehliβ, G.; Rothe, St.

doi:10.1016/0167-9317(92)90018-m

Cited by 4 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the incident light can be linearly linearly polarized, we set a s = 1 for transverse electric (TE) fields and a p = 1 for transverse magnetic (TM) fields, respectively. 2 We ensured that the principle of energy conservation was not violated by any of the results reported here [13]. 5.…”

Section: Resultsmentioning

confidence: 95%

Electromagnetic modeling of near-field phase-shifting contact lithography with broadband ultraviolet illumination

Wang

Weaver

Lakhtakia

et al. 2005

Optik

View full text Add to dashboard Cite

Near-field phase-shifting contact lithography is modeled to characterize electromagnetic absorption in a photoresist layer with one face in contact with a quartz binary phase-shift mask. The broadband ultraviolet illumination is represented as a frequencyspectrum of normally incident plane waves. A rigorous coupled-wave analysis is carried out to determine the absorption spectrum of the photoresist layer. The specific absorption rate in the photoresist layer is calculated and examined in relation to the geometric parameters. Columnar features in the photoresist layer are of higher quality on broadband illumination in contrast to monochromatic illumination, in conformity with some recent experimental results. Feature resolution and profile are noticeably affected by the depth of the grooves in the phase-shift mask. Ideally, the feature linewidth can be less than about 100 nm for broadband illumination in the transverse-magnetic mode. These conclusions are subject to modification by the photochemistry-wavelength characteristics of the photoresist.

show abstract