No abstract

No abstract

This paper presents the resufb on the patterning of shalfow french isolation for the 70nm DRAM technology node on 300mm wafers. Using a new friple hard mask approach incorporating a carbon plm patterns with 70nm CD and STI depth of abaut 250nm could be achieved. Keywords

No abstract

The reduction of the resist thickness, needed for high resolution lithography, increases thin film effects. The PRIME-process is used as an example ofhigh resolution lithography (structure width <0.2 tim). In the paper the influence ofthe resist thickness and the DNQ -diffusion is studied by simulations and experiments. As a result it is to conclude, that the diffusion of DNQ has to be minimized to about 20 nm caused by the lateral dimension ofthe structures.