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Electron-beam lithography with low voltage electrons offers a number of advantages. Low voltage electrons have short penetration depths. Therefore, backscattering from the substrate which causes the proximity effect as well as radiation damage in the substrate are potentially minimized or excluded. As a consequence, a top surface imaging resist technology should be applied. The surface imaging by silylation was combined with low voltage electron exposure using 1.8-, 3-, and 5-keV electrons. Resist structures down to 50 nm are shown.

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