2017
DOI: 10.1007/s10470-016-0916-9
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A new CMOS comparator robust to process and temperature variations for SAR ADC converters

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Cited by 18 publications
(9 citation statements)
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“…P @i , P @j and P overall are representing the power of Comp1, Comp2 and 11th-bit power, respectively, including both comparisons, where @i, @j, is the noise voltage for Comp1 and Comp2, respectively. Additionally, the step input response can be found on the complete circuit when spider-latch and amplifiers are active as in de La Fuente-Cortes et al (2017).…”
Section: Performance and Resultsmentioning
confidence: 99%
“…P @i , P @j and P overall are representing the power of Comp1, Comp2 and 11th-bit power, respectively, including both comparisons, where @i, @j, is the noise voltage for Comp1 and Comp2, respectively. Additionally, the step input response can be found on the complete circuit when spider-latch and amplifiers are active as in de La Fuente-Cortes et al (2017).…”
Section: Performance and Resultsmentioning
confidence: 99%
“…Table 7 gives details regarding the comparison on the basis of power consumption of this comparator with other pertinent associated studies. [32] 130 nm 1.0 V 130 nm 100 µW [33] 180 nm 1.1 V -180 nm 1300 µW [34] 180 nm --180 nm ∼ =750 µW [35] 65 nm 1.2 V -65 nm 2800 µW [36] 65 nm 1.2 V 65 nm 370 µW [37] 180 nm 0.7 V to 1.1 V 180 nm 420 µW GB-CMFD (Proposed-architecture) 90 nm 0.7 V 839 V/µs 90 nm 362 µW…”
Section: Discussionmentioning
confidence: 99%
“…To reduce the power consumption, there are many diferent methods, as will be demonstrated in this paper. Various confgurations for the comparator [14][15][16][17][18][19][20][21][22][23][24] can be used to reduce power consumption, time delay, and noise efects. In addition, the modifed binary-weighted CDAC structure can save area and energy.…”
Section: Sar Adc Architecturementioning
confidence: 99%
“…Where the charge injection is defned as the charge that exists between the source and drain terminals when the sample switch is turned of, and the clock feed through is defned as the charge injected due to the overlapping coupling capacitor between the gate and drain terminals. Consequently, it is preferable to implement the sample switch by using CMOS transmission gates [8,64,103] or the bootstrap switch in Figure 4 [2,5,6,11,17,22,24,31,34,45,53,58,63,65 Te variations in conductivity are reduced by utilizing the CMOS transmission gates, but the problem of input dependence still exists. Additionally, a large parasitic capacitor that limits the resolution of SAR appears.…”
Section: Sar Sample and Hold Circuitmentioning
confidence: 99%