A new CMOS readout circuit for uncooled bolometric infrared focal plane arrays

Yu, Tsung-Hsin; Wu, Chung-Yu; Chen, Pei-Yen; Chi, Fa-Wen; Luo, Jiunn–Jye; Chiang, Cheng Der; Cherng, Ya-Tung

doi:10.1109/iscas.2000.856373

Cited by 13 publications

(2 citation statements)

References 9 publications

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“…Various methods have been studied to solve the problem of variations among bolometer resistors integrated in active and reference pixels. (11)(12)(13)(14)(15)(16)(17) Among previously reported research, the averaging pixel current adjustment technique has been used to reduce process variations among resistors. (18) However, a standard CMOS process was used to design the active and reference pixels with polysilicon resistors in previous research.…”

Section: Introductionmentioning

confidence: 99%

Pixel Dark Current Calibration Method to Reduce Dark Fixed Pattern Noise in Amorphous Silicon Bolometer-type Uncooled Infrared Image Sensor

Kim¹,

Lee²,

Kwen³

et al. 2020

Sensors and Materials

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In this paper, we propose a pixel dark current calibration method to reduce dark fixed pattern noise in an amorphous silicon bolometer-type uncooled infrared image sensor. This dark current calibration method utilizes an active pixel, a reference pixel, and a calibration circuit. The active and reference pixels were fabricated entirely from amorphous silicon. Even if amorphous silicon components with the same resistance are manufactured, there may be variations in resistance owing to process deviations during the manufacture of the amorphous silicon pixels. Dark fixed pattern noise due to resistance variations causes non-uniformity among the output voltages of the pixels. The operating principle of the pixel dark current calibration method to reduce dark fixed pattern noise is thus based on the subtraction of the averaged dark current of the active pixel from that of the reference pixel. The proposed pixel dark current calibration method is implemented by a chip consisting of an amorphous silicon bolometer pixel array, a calibration circuit, and column readout circuits. The entire chip was fabricated using a 0.11 μm CMOS image sensor process and its performance was evaluated.

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Section: Introductionmentioning

confidence: 99%

Pixel Dark Current Calibration Method to Reduce Dark Fixed Pattern Noise in Amorphous Silicon Bolometer-type Uncooled Infrared Image Sensor

Kim¹,

Lee²,

Kwen³

et al. 2020

Sensors and Materials

View full text Add to dashboard Cite

show abstract

“…If the full chip layout ( figure 3-35) is looked at, one should notice that there are four boxes, like those seen in figure 4-22, in each comer of the chip. Next, looking at one of the masks found in appendix E, there will be either a box or a cross in the comer of the mask, depending on if the mask is a positive or negative mask (also seen in figure [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. By lining up the marks on the chip with those on the mask the resulting pattern will be properly aligned.…”

Section: Mask Alignmentmentioning

confidence: 99%