A new correlation method for improvement in selectivity of bulk trap measurements from capacitance and voltage transients

Dmowski, K.

doi:10.1063/1.1141180

Cited by 37 publications

(8 citation statements)

References 34 publications

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“…The capacitance transients were evaluated using a three window technique to enhance the resolution. 34 Minority carrier transient spectroscopy (MCTS) was used to probe hole trapping and emission. Charge carriers were excited by an UV laser pulse (Ar þ ion laser at about 351-355 nm) during 200 ms under constant reverse bias conditions.…”

Section: Methodsmentioning

confidence: 99%

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Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Beyer

Henry

Hemmingsson

et al. 2010

Crystal Growth & Design

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In this study, chloride-based chemical vapor deposition (CVD) of SiC is used either to grow epitaxial layers at high growth rate and to facilitate homopolytypic growth on on-axis substrates or to grow bulk material at temperatures lower than 2000°C. A vertical reactor configuration with an inlet of gas flow placed at the bottom of the reactor chamber and the exhaust at the top of it has been used. The chlorinated precursors have helped to eliminate or greatly reduce cluster formation, thereby allowing the deposition of thick SiC epilayers at growth rates exceeding 300 μm/h at 1700-1900°C. Up to 1.5 mm thick homoepitaxial layers have been grown on up to 75 mm diameter 4H-or 6H-SiC wafers. Both on-axis and off-axis, Si-face and C-face polarities have been used. Our results show great promise for the realization of a high growth rate epitaxial process suitable for bulk growth at temperatures lower than those typically used. Such a process is interesting on account of the higher quality material and lower operating cost.

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Section: Methodsmentioning

confidence: 99%

“…The DLTS measurements were performed between 110 and 600 K with a reverse bias of 10 V, a voltage pulse width of 10 ms, and a transient time of 500 ms. The capacitance transients were evaluated using a three window technique to enhance the resolution . Minority carrier transient spectroscopy (MCTS) was used to probe hole trapping and emission.…”

Section: Methodsmentioning

confidence: 99%

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Beyer

Henry

Hemmingsson

et al. 2010

Crystal Growth & Design

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“…9 The DLTS analysis was done by using three-a͒ Electronic mail: cah@ifm.liu.se b͒ Present address: Cree Research Inc., 4600 Silicon Dr., Durham, NC 27703. point-correlation windows. 7 Since the capacitance transients obtained from our DLTS setup are sampled in equidistant points and digitized, we have numerically calculated the emission rate e n corresponding to each correlation window. By doing a numerical calculation, we also account for the finite gate width of the correlation window.…”

Section: Methodsmentioning

confidence: 99%

Capture cross sections of electron irradiation induced defects in 6H–SiC

Hemmingsson

Son

Kordina

et al. 1998

Journal of Applied Physics

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Electrically active defects in irradiated 4H-SiC J. Appl. Phys. 95, 4728 (2004); 10.1063/1.1689731Electron-irradiation-induced deep levels in n-type 6H-SiC A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiCAn investigation of electron irradiation induced deep levels in 6H-SiC p ϩ n diodes grown by chemical vapor deposition has been performed. Deep level transient spectroscopy ͑DLTS͒ reveals several overlapping peaks in the temperature range 140-650 K. The electron capture cross sections have been measured by directly observing the variation of the DLTS peak height with the duration of the filling pulse and fitting the capacitance transient using multiple linear regression. Temperature dependence studies of the electron capture cross section were performed on three of the observed levels.

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“…[8][9][10] Also noteworthy is the fact that in 6H-SiC, a pair of electron traps located at ∼ E c − 0.4 eV and labelled E 1 /E 2 from DLTS measurements, were attributed to acceptor transitions from equivalent defects at different sub-lattice sites. 12,13 More recently, high-resolution Laplace-DLTS was able to further resolve E 1 /E 2 into three components, and based on their similarity with Z 1/2 (including their capture cross section and negative-U ordering of levels), they were assigned to the carbon vacancy located on all arXiv:1710.07513v2 [cond-mat.mtrl-sci] 2 Nov 2017 three available sites (h, k 1 and k 2 ) of the 6H polytype. 14 The EH 6/7 DLTS band has been a subject of discussion and surrounded by some controversy.…”

Section: Introductionmentioning

confidence: 99%

Theory of the carbon vacancy in 4H -SiC: Crystal field and pseudo-Jahn-Teller effects

et al. 2017

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The carbon vacancy in 4H-SiC is a powerful minority carrier recombination center in as-grown material and a major cause of degradation of SiC-based devices. Despite the extensiveness and maturity of the literature regarding the characterization and modeling of the defect, many fundamental questions persist. Among them we have the shaky connection of the EPR data to the electrical measurements lacking sub-lattice site resolution, the physical origin of the pseudo-Jahn-Teller effect, the reasoning for the observed sub-lattice dependence of the paramagnetic states, and the severe temperature-dependence of some hyperfine signals which cannot be accounted for by a thermally-activated dynamic averaging between equivalent Jahn-Teller distorted structures. In this work we address these problems by means of semi-local and hybrid density functional calculations. We start by inventorying a total of four different vacancy structures from the analysis of relative energies. Diamagnetic states have well defined low-energy structures, whereas paramagnetic states display metastability. The reasoning for the rich structural variety is traced back to the filling of electronic states which are shaped by a crystal-field-dependent (and therefore site-dependent) pseudo-Jahn-Teller effect. From calculated minimum energy paths for defect rotation and transformation mechanisms, combined with the calculated formation energies and electrical levels, we arrived at a configuration-coordinate diagram of the defect. The diagram provides us with a detailed first-principles picture of the defect when subject to thermal excitations. The calculated acceptor and donor transitions agree well with the binding energies of electrons emitted from the Z 1/2 and EH 6/7 traps, respectively. From the comparison of calculated and measured U -values, and correlating the site-dependent formation energies with the relative intensity of the DLTS peaks in as-grown material, we assign Z1 (EH6) and Z2 (EH7) signals to acceptor (donor) transitions of carbon vacancies located on the h and k sub-lattice sites, respectively * jose.coutinho@ua.pt

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A new correlation method for improvement in selectivity of bulk trap measurements from capacitance and voltage transients

Cited by 37 publications

References 34 publications

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Capture cross sections of electron irradiation induced defects in 6H–SiC

Theory of the carbon vacancy in 4H -SiC: Crystal field and pseudo-Jahn-Teller effects

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