2005
DOI: 10.1016/j.apsusc.2004.10.059
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A new crystallization technique of Si films on glass substrate using thermal plasma jet

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Cited by 41 publications
(27 citation statements)
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“…Due to the high ion temperature, the overall gas temperature is typically several 1000 K and this plasma type is therefore not considered suitable for the treatment of heat-sensitive materials such as TE scaffolds. Equilibrium plasmas are mainly applied for the surface modification of metallic and silicon-wafer surfaces which can withstand the high operating gas temperatures to deposit a thin diamond-like coating, zinc oxide coatings and silicone films [191][192][193][194]. Other application fields can be found in the field of nanoparticle production and the destruction of hazardous waste [195].…”
Section: Plasma Set-ups Used For the Treatment Of Nanofibrous Te Scafmentioning
confidence: 99%
“…Due to the high ion temperature, the overall gas temperature is typically several 1000 K and this plasma type is therefore not considered suitable for the treatment of heat-sensitive materials such as TE scaffolds. Equilibrium plasmas are mainly applied for the surface modification of metallic and silicon-wafer surfaces which can withstand the high operating gas temperatures to deposit a thin diamond-like coating, zinc oxide coatings and silicone films [191][192][193][194]. Other application fields can be found in the field of nanoparticle production and the destruction of hazardous waste [195].…”
Section: Plasma Set-ups Used For the Treatment Of Nanofibrous Te Scafmentioning
confidence: 99%
“…More challenging issue is formation of single-crystalline silicon films at predetermined position on glass and plastics. We have proposed thermal plasma jet (TPJ) annealing technique to fabricate LTPS transistors [4,5]. Because of its simple structure and atmospheric pressure process, TPJ enables low cost fabrication compared with ELA.…”
Section: Introductionmentioning
confidence: 99%
“…Depending on the irradiation conditions, SPC, leading-wave crystallization (LWC), high-speed lateral crystallization (HSLC), and granular crystal growth of a-Si have been observed in the microsecond time domain on the basis of high-speed camera (HSC) observations. [21][22][23][24] However, in the case of ultra-rapid crystallization of a-Ge, there is almost no report on its mechanism. In addition, the relationship between the crystallization mechanism and the resulting electrical characteristics such as carrier concentration and mobility is still a matter of research.…”
Section: Introductionmentioning
confidence: 99%