A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses

Takizawa, Satoki; Igarashi, Seiki; Kuroki, K.

doi:10.1109/pesc.1998.703241

Cited by 35 publications

(11 citation statements)

References 7 publications

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“…Previous studies have considered using active gate driver to solve the EMI issues related to di/dt and dv/dt and the current and voltage overshoots that may affect the safe operation of IGBT module [6]- [22]. Applying the active gate driver solutions, the collector current overshoot during the turn-on interval of an IGBT can be reduced by steering the current slew rate.…”

Section: Transconductance Of the Igbt E Onmentioning

confidence: 99%

“…27, a gate current sink formed by a MOSFET and a diode is used to bypass part of the gate current during the collector current rising stage of the turnon process, thus the current rising rate is decreased to suppress the current overshoot [6]- [9], [22]. The gate voltage v GE is detected in the turn-on process for the determination of different switching stages.…”

Section: Combining Damping Circuit With Active Gate Drivermentioning

confidence: 99%

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Turn-On Oscillation Damping for Hybrid IGBT Modules

Zhu¹,

Zhang²,

Chen³

et al. 2016

CPSS TPEA

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Abstract-In a hybrid IGBT module with SiC diodes as free-wheeling diodes, high frequency oscillation occurs during turn-on due to the fast switching transient of SiC diode and the resonance between circuit parasitic inductances and the junction capacitance of SiC diode. Such oscillation causes EMI noise which may affect the performance of the system. Methods to mitigate the turn-on oscillation are studied. Firstly, the effect of gate drive parameters on turn-on oscillation is investigated with respect to different gate voltages and gate charging currents. Then a novel turn-on oscillation suppression method is proposed with combination of damping circuit and active gate driver. The proposed oscillation suppression method can achieve the lowest EMI noise while remaining the advantage of lower switching loss brought by SiC diodes. Detailed theoretical analysis of the turn-on oscillation is conducted, and experimental results are given to verify the effectiveness of the proposed oscillation suppression method. Index terms-Hybrid

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Section: Transconductance Of the Igbt E Onmentioning

confidence: 99%

Section: Combining Damping Circuit With Active Gate Drivermentioning

confidence: 99%

Turn-On Oscillation Damping for Hybrid IGBT Modules

Zhu¹,

Zhang²,

Chen³

et al. 2016

CPSS TPEA

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“…This high-impedance path decreases the di/dt and consequent voltage or current overshoot and oscillations. The impedance of the charging/discharging path of the gate is then decreased in the dv/dt control interval to increase the dv/dt and reduce the switching loss [14]- [15]. However, the main drawback of these methods is the lack of adjustability of di/dt and dv/dt in different operating conditions due to use of discrete resistance values.…”

Section: B State Of the Art Work On Switching Transition Controlmentioning

confidence: 99%

Closed-loop control of switching transition of SiC MOSFETs

Riazmontazer

Rahnamaee

Mojab

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper presents a novel closed-loop active-gatecontrol (AGC) circuit for high-voltage SiC MOSFETs, used in the high-voltage, high-frequency and high-power-density applications. The proposed controller independently adjusts the switching di/dt and dv/dt by closed-loop control of the gate current and enables one to reach optimal performance in terms of loss, device stress, and EMI. The di/dt is adjusted to control the overvoltage stress and peak reverse recovery current while the dv/dt is adjusted to control the common mode (CM) noise and switching loss. The dv/dt is the primary source of the common mode noise in power electronics converters. Dynamic control of switching dv/dt has been somewhat overlooked in the state-of-the art works based on Si based power semiconductor devices (PSDs), and maximum achievable dv/dt is used to decrease the switching loss. However, the magnitude of generated dv/dt in the high-voltage SiC-based applications is appreciable because of the exceptionally higher switching speed of the SiC MOSFETs as compared to Si IGBTs. In contrast to other works, the proposed controller dynamically and independently controls the turn-off di/dt and dv/dt of a SiC MOSFET using closed-loop control of the gate current. Independent control of turn-off di/dt and dv/dt is achieved using a delay compensation circuit. This circuit compensates the total delay in the feedback loop and predicts the onset of transition between dv/dt and di/dt control regions. The proposed control circuit operation and advantages are presented and verified by experimental results.

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“…It is important to minimize these losses, particularly, the converter switching loss for a high power capacity. To overcome the switching delay and switching loss problems, various active driving approaches have been proposed in the past [5][6][7][8][9][10][11][12][13]. The methods in [5][6][7][8][9][10] have used multiple gate resistors to control the gate current during switching transients.…”

Section: Introductionmentioning

confidence: 99%

Turn-on Loss Reduction for High Voltage Power Stack Using Active Gate Driving Method

Kim¹,

Park²,

Gu³

et al. 2017

Journal of Electrical Engineering and Technology

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-This paper presents an improved approach towards reducing the switching loss of insulated gate bipolar transistors (IGBTs) for a medium-capacity-class power conditioning system (PCS). In order to improve the switching performance, the switching operation is analyzed, and based on this analysis, an improved switching method that reduces the switching time and switching loss is proposed. Compared to a conventional gate drive scheme, the switching loss, switching time, and delay are improved in the proposed gate driving method. The performance of the proposed gate driving method is verified through several experiments.

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A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses

Cited by 35 publications

References 7 publications

Turn-On Oscillation Damping for Hybrid IGBT Modules

Turn-On Oscillation Damping for Hybrid IGBT Modules

Closed-loop control of switching transition of SiC MOSFETs

Turn-on Loss Reduction for High Voltage Power Stack Using Active Gate Driving Method

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