A new fabrication technology of FinFETs using a neutral beam etching

Endo, Kazuhiko; Noda, Shuichi; Ozaki, T.; Samukawa, Seiji; Masahara, Meishoku; Liu, Y.; Ishii, Keisuke; Takashima, H.; Sugimata, Etsuro; Matsukawa, T.; Yamauchi, H.; Ishikawa, Yoshihiro; Suzuki, Eiichi

doi:10.1109/imnc.2005.203821

Cited by 8 publications

(17 citation statements)

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“…18). 37,38) This result shows that the interface traps in the fabricated devices were well-suppressed by diluted hydrogen annealing. Thus, the Coulomb scattering caused by the interface trap does not explain the difference in mobility.…”

Section: Influence Of Etching Damage On Less Than 20 Nmmentioning

confidence: 71%

“…11. 36) We also fabricated similar rectangular Si fins by conventional plasma etching for comparison. An SEM image of the Fin FET fabricated is shown in Fig.…”

Section: Influence Of Etching Damage On Less Than 20 Nmmentioning

confidence: 99%

“…12. 36) The n-channel Fin FETs with fin width (t fin ) = 50 nm and gate length (L g ) = 110 nm fabricated by neutral beam etching have superior subthreshold characteristics compared with the conventional plasma etching ones at the same V th (Fig. 13).…”

Section: Influence Of Etching Damage On Less Than 20 Nmmentioning

confidence: 99%

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Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

Samukawa

2006

jjap

139

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For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, I introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

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Section: Influence Of Etching Damage On Less Than 20 Nmmentioning

confidence: 71%

“…11. 36) We also fabricated similar rectangular Si fins by conventional plasma etching for comparison. An SEM image of the Fin FET fabricated is shown in Fig.…”

Section: Influence Of Etching Damage On Less Than 20 Nmmentioning

confidence: 99%

See 1 more Smart Citation

Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

Samukawa

2006

jjap

139

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“…Under the neutral beam etching condition adopted in this work, the neutralization efficiency of Cl − ions is more than 95%. 10) Thus, in neutral beam etching, the influences of the UV light and charge build-up can be eliminated and defect-free etching can be realized.…”

mentioning

confidence: 99%

Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

Mizubayashi

Noda

Ishikawa

et al. 2017

Appl. Phys. Express

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We investigated the impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and the device performance of Ge fin field-effect transistors (Ge FinFETs). UV light irradiation during etching affected the shape of the Ge fin and the surface roughness of the Ge fin sidewall. A vertical and smooth Ge fin could be fabricated by neutral beam etching without UV light irradiation. The performances of Ge FinFETs fabricated by neutral beam etching were markedly improved as compared to those of Ge FinFETs fabricated by inductively coupled plasma etching, in which the UV light has an impact.

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“…Neutral beam process technology has attracted attention as a way of solving these issues. [5][6][7][8][9][10][11][12][13][14][15] The neutral beam suppresses the incidence of charged particles and UV photon radiation onto the substrate, and is able to expose the substrate only to energy controlled neutral beam (neutral beam motion energy can be precisely controlled by ion acceleration energy with the applied electric field before neutralization), resulting in ultra-precise nanoprocessing that can suppress the formation of defects at the atomic layer level and control surface chemical reactions with high precision. This paper reviews the neutral beam generation technique 7,8 developed by S. Samukawa, and introduces its application to atomic layer etching (ALE) and deposition (ALD) that have recently been pursued.…”

mentioning

confidence: 99%

A Neutral Beam Process for Controlling Surface Defect Generation and Chemical Reactions at the Atomic Layer

Samukawa

2015

ECS J. Solid State Sci. Technol.

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Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. We are using this technique to develop future innovative nanodevices.

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A new fabrication technology of FinFETs using a neutral beam etching

Cited by 8 publications

References 0 publications

Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching

Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

A Neutral Beam Process for Controlling Surface Defect Generation and Chemical Reactions at the Atomic Layer

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