A new failure mode of radiation-induced soft errors in dynamic memories

Rajeevakumar, T.V.; Lu, Nicky; Henkels, W.H.; Hwang, Wei; Franch, R.

doi:10.1109/55.20423

Cited by 24 publications

(10 citation statements)

References 7 publications

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“…In 1988, Rajeevakumar et al observed a new failure mode in DRAMs due to a synergistic effect of bit-line and storage cell charge collection [72]. Both processes individually resulted in less charge collection than , but the combined effect during a read operation caused an error.…”

Section: A Seu Mechanisms In Dramsmentioning

confidence: 98%

Basic mechanisms and modeling of single-event upset in digital microelectronics

Dodd

Massengill

2003

IEEE Trans. Nucl. Sci.

904

427

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Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.

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Section: A Seu Mechanisms In Dramsmentioning

confidence: 98%

Basic mechanisms and modeling of single-event upset in digital microelectronics

Dodd

Massengill

2003

IEEE Trans. Nucl. Sci.

904

427

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“…In 1988 Rajeevakumar et al observed a failure mode in DRAM's due to a synergistic effect of bit-line and cell-charge collection [31]. Each collection process resulted in less charge than Qc, but the combined effect during a read operation caused an error.…”

Section: Combined Cell Bit-line Errors (Ccb's)mentioning

confidence: 98%

“…Measured alpha error rates for submegabit planar DRAM structures showing the relationship between cell errors and bit-line errors[28],[31]. however, has prompted increased collection o f both spacebased and ground-based heavy-ion SEU experimental data.…”

mentioning

confidence: 99%

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Massengill

1996

IEEE Trans. Nucl. Sci.

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A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit informatidn loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed.

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“…Once the cell flips, there is no mechanism for its recovery other than explicitly rewriting the state via the bitlines. Soft errors can also be caused by particle strikes on bitlines [37]. During the read operation, a bitline is discharged by a small current from a memory cell.…”

Section: Impact On Circuits and Systemsmentioning

confidence: 99%

“…ECC with double-error detection can be implemented by appending an additional bit to a singleerror-correcting ECC, e.g., a Hamming code [37]. More effective ECC requires more redundancy and is seldom used in mainstream commercial circuits.…”

Section: Block-level Impactmentioning

confidence: 99%

Characterization of soft errors caused by single event upsets in CMOS processes

Karnik

Hazucha

2004

IEEE Trans.Dependable and Secure Comput.

447

211

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Abstract-Radiation-induced single event upsets (SEUs) pose a major challenge for the design of memories and logic circuits in highperformance microprocessors in technologies beyond 90nm. Historically, we have considered power-performance-area trade offs. There is a need to include the soft error rate (SER) as another design parameter. In this paper, we present radiation particle interactions with silicon, charge collection effects, soft errors, and their effect on VLSI circuits. We also discuss the impact of SEUs on system reliability. We describe an accelerated measurement of SERs using a high-intensity neutron beam, the characterization of SERs in sequential logic cells, and technology scaling trends. Finally, some directions for future research are given.

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A new failure mode of radiation-induced soft errors in dynamic memories

Cited by 24 publications

References 7 publications

Basic mechanisms and modeling of single-event upset in digital microelectronics

Basic mechanisms and modeling of single-event upset in digital microelectronics

Cosmic and terrestrial single-event radiation effects in dynamic random access memories

Characterization of soft errors caused by single event upsets in CMOS processes

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