A new gate driver circuit for improved turn-off characteristics of high current IGBT modules

Weis, B.; Bruckmann, M.

doi:10.1109/ias.1998.730280

Cited by 22 publications

(8 citation statements)

References 3 publications

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“…A gate drive circuit that allows independent control of the rate of rise of the collector voltage and the rate of fall of the collector current [4] is shown in Fig. The stray inductances consist of the inductance in the DC link capacitor and the bus bars within IGBT modules.…”

Section: Two-stage Gate Drivementioning

confidence: 99%

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Gate Drive Circuit Design

Baliga

2015

The IGBT Device

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Section: Two-stage Gate Drivementioning

confidence: 99%

“…This method has been found to reduce the over-voltage by 60% [4] while maintaining low switching losses. The monoflop turns off transistor T 1 for a short time.…”

Section: Two-stage Gate Drive 195mentioning

confidence: 99%

Gate Drive Circuit Design

Baliga

2015

The IGBT Device

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“…Owing to several advantages, at present the second class methods are preferred and studied by most engineers. A variety of flexible gate control strategies are proposed in [4][5][6][7][8][9][10][11][12] to mitigate the voltage overshoot and ring at the source. According to different instants the gate charge starts to be controlled, we begin to take control of the gate charge, also these methods can be divided into two categories.…”

Section: Introductionmentioning

confidence: 99%

“…According to different instants the gate charge starts to be controlled, we begin to take control of the gate charge, also these methods can be divided into two categories. The methods proposed by references [4][5][6][7][8][9][10] begin to slow down the discharge rate of the input capacitance since the Miller plateau. Although the method proposed by John et al [11] starts to control the discharge rate of the gate-drain capacitance, after the Miller plateau the drain current begins to fall.…”

Section: Introductionmentioning

confidence: 99%

Active closed‐loop gate voltage control method to mitigate metal‐oxide semiconductor field‐effect transistor turn‐off voltage overshoot and ring

Wang

Sun

et al. 2013

IET Power Electronics

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Voltage overshoot and ring will occur during metal-oxide semiconductor field-effect transistor (MOSFET) turn-off, when it is embedded in circuits with inductive load and operates in pulse width modulation mode. The voltage overshoot and ring not only increase the system voltage stress, but also produce radiated and conducted electromagnetic interference. Based on the analysis of the influence of the gate voltage on the MOSFET turn-off behaviour, this study presents an active closedloop gate voltage control method to mitigate the voltage overshoot and ring. The proposed method senses the instant when the MOSFET drain current starts to fall by comparing the drain voltage with the bus voltage. Once the instant has been detected, a turn-off assistance voltage with proper amplitude and adjustable duration is generated and applied to the gate to mitigate the overshoot and ring. The delay of the gate control loop, including the delay of the comparator, can be compensated by proper choice of the components. Both simulations and experiments results indicate that the MOSFET turnoff voltage overshoot is largely reduced and the ring is almost completely eliminated. At the same time, the turn-off loss and EMI are also minimised.

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“…Techniques are often desired for actively controlling the output terminal dv/dt and di/dt of insulated-gate power devices such as MOSFETs and IGBTs in hard-switched converters in order to reduce electromagnetic interference (EMI) and voltage overshoots without requiring bulky and lossy snubber circuits [1][2][3][4]. In hard-switched applications requiring series or parallel connections of several MOS-gated power switches, these dv/dt and di/dt control techniques are critical to insuring that the voltage or current is properly shared among the power devices during the switching transients.…”

Section: Introductionmentioning

confidence: 99%

Flexible dv/dt and di/dt control method for insulated gate power switches

Park

Jahns

Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248)

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Abstract-Active gate control techniques are introduced in this paper for flexibly and independently controlling the and of insulated gate power devices during hard-switching events. In the case of control, the output voltage can be controlled over a wide range by electronically adjusting the effective gate-to-drain (-collector) capacitance (i.e., Miller capacitance). For control, similar techniques are applied for electronically adjusting the output current over a wide range using voltage feedback from a small inductor connected in series with the switch's source (emitter) terminal. Both techniques are designed to maximize their compatibility with power module implementations that combine the power switch and its gate drive, including integrated circuit gate drives. Simulation and experimental results are included to verify the desirable performance characteristics of the presented and control techniques.

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A new gate driver circuit for improved turn-off characteristics of high current IGBT modules

Cited by 22 publications

References 3 publications

Gate Drive Circuit Design

Gate Drive Circuit Design

Active closed‐loop gate voltage control method to mitigate metal‐oxide semiconductor field‐effect transistor turn‐off voltage overshoot and ring

Flexible dv/dt and di/dt control method for insulated gate power switches

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