A new height-adjustable aeromems surface fence probe fabricated in SOI technology for high resolution wall shear stress measurement in turbulent flows

Schiffer, Michael; Obermeier, Ε.; Grewe, F.; Ebner, Andreas; Femholz, H.H.

doi:10.1109/sensor.2005.1496489

Cited by 5 publications

(6 citation statements)

References 6 publications

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“…The results is however very similar, as the 4th term in (6) becomes non-negligible. From (1) and (2), we can get (9) The above transcendental was solved graphically and the maximum linear operation temperatures were calculated as 632 C, 528 C, and 378 C for the driving current 100 , 10 , and 100 nA, respectively. It can be seen that the maximum linear operation temperature calculated from all the three methods are quite close to each other, and also match well with our experimental findings depicted in Fig.…”

Section: Maximum Linear Temperature Operationmentioning

confidence: 99%

“…While SOI diode temperature sensors have been utilized for low to medium level temperature monitoring in different applications (e.g., invasive blood velocity measurements [7], temperature rise in SOI devices [8], wall shear stress measurements [9], bonding stress sensing in 3-D chips [10]), there are only few reports that investigate or analyze the performance of SOI diodes based temperature sensors to temperatures up to or beyond 250 C [11]- [13]. One of these [11], describes a work function type SOI diode temperature sensor and compares its performance with that of a diode on bulk silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

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Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

et al. 2010

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Silicon diodes can be used for accurate temperature monitoring up to higher temperatures in a variety of sensors such as micro-machined resistive and calorimetric gas sensors, thermal flow sensors, exhausts, etc. This paper investigates the performance of a diode temperature sensor when operated at ultra high temperatures (up to 780 C). A low leakage silicon on insulator (SOI) diode was designed and fabricated in a 1.0 m CMOS (complementary metal oxide semiconductor) process. The diodes were suspended within a dielectric membrane [formed by post CMOS deep reactive ion etching (DRIE)] for efficient thermal insulation. A CMOS compatible micro-heater was integrated with the diode on the dielectric membrane for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We show experimentally that the maximum temperature up to which the linearity of diode's forward voltage output is maintained can be as high as 550 C. Long term continuous operation at high temperatures (400 C and 500 C) showed good stability of the diode voltage drop. Finally, we present a detailed theoretical analysis that helps to determine the maximum operating temperature for the diode and also explains the presence of nonlinearity factors in diode voltage output at ultra high temperatures.

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Section: Maximum Linear Temperature Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

et al. 2010

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“…'MEMS floating element sensors' which use the movement of its floating element due to the flow, to determine the wall shear stress [4,[6][7][8][9][10][11][12]. Indirect methods measure wall shear stress through other measured parameter which is related to wall shear stress by some empirical or theoretical correlations [13][14][15][16][17][18][19][20], such as micro thermal sensors [21][22][23][24], micro fence [25,26], micro optical [27,28] and micro pillar [29,30] sensors.…”

Section: Introductionmentioning

confidence: 99%

A tungsten based SOI CMOS MEMS wall shear stress sensor

Haneef

Umer

Mansoor

et al. 2014

IEEE SENSORS 2014 Proceedings

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In this work we report, for the first time, a silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor that uses CMOS tungsten metallization as sensing element, supported by a composite membrane comprising of silicon oxide and silicon nitride. The sensor was fabricated using a commercial 1 µm SOI CMOS process. The CMOS tungsten metallization was used to create a hot film element with size 200 μm × 2 μm × 0.3 μm. Post-CMOS, the wafers were back-etched in a single Deep Reactive Ion Etching (DRIE) step to create a 250 μm diameter circular membrane comprising silicon oxide and silicon nitride layers under the hot-film sensor. The sensor exhibits a high Temperature Coefficient of Resistance (TCR) (0.21 %/ o C), and very effective thermal isolation from substrate evident from its thermal resistance (20,435 o C/Watt, or ~ 6mW for temperature rise of 100 o C). The sensor has been calibrated in constant temperature (CT) mode in a 2-D laminar flow wind tunnel for a wall shear stress range of 0-1.6 Pa to show an average sensitivity of 35 mV/Pa at an Over Heat Ratio (OHR) of 1.0.

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“…In contrast, measuring in water with the micro-fabricated sensor modules will be a challenge. The combination of pressure sensor and a hotwire sensor is considered to be a promising development mentioned in many studies (Ebefors et al 1998;Schiffer et al 2005;Berns et al 2008).…”

Section: Basic Geometry and Limitationsmentioning

confidence: 99%

Design and evaluation process of a robust pressure sensor for measurements in boundary layers of liquid fluids

2011

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In this work, the latest results of the design, fabrication and characterization of a new MEMS piezoresistive pressure sensor are presented. Significant changes in the layout as well as in the micro-fabrication process have been made, e.g. anodic bonding of a glass cover on the backside. The sensor has been developed in order to meet the special requirements of measurements in fluid mechanics, particularly with regard to the non-intrusive nature of the sensor. The sensor development, starting with the simulation of mechanical stresses within the diaphragm resulting from a pressure of up to 4 bar is described. These calculations have lead to an optimized placement of the piezoresistors in order to achieve a maximum sensitivity. Important parameters including sensitivity, resonance frequency and maximum load are described precisely. The experiments and the initial results, e.g. its linearity and its dynamic capability are demonstrated.

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A new height-adjustable aeromems surface fence probe fabricated in SOI technology for high resolution wall shear stress measurement in turbulent flows

Cited by 5 publications

References 6 publications

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

A tungsten based SOI CMOS MEMS wall shear stress sensor

Design and evaluation process of a robust pressure sensor for measurements in boundary layers of liquid fluids

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