A new in situ residual stress measurement method for a MEMS thin fixed-fixed beam structure

Chen, S.; Baughn, T.; Yao, Zhuang; Goldsmith, C. Franklin

doi:10.1109/jmems.2002.800936

Cited by 66 publications

(52 citation statements)

References 14 publications

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“…By contrast, close to the edges, compressive stresses as high as 24 MPa were observed. Note that these findings were in agreement with the nonuniform stress distribution identified by Chen et al [24], by employing a different methodology, for the same MEMS device. While the M-test and MDE were developed for on-chip material characterization, its applicability to device reliability studies is straightforward.…”

Section: On-chip Experimentation Techniquessupporting

confidence: 91%

Reliability of capacitive RF MEMS switches at high and low temperatures

Zhu

Espinosa

2004

Int J RF and Microwave Comp Aid Eng

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Some applications of RF MEMS switches, such as aircraft condition monitoring and distributed satellite communication, present a unique challenge for device design and reliability. This article examines these switches when operational temperatures in the range ؊60°C to 100°C are envisioned. The basic operation of a capacitive MEMS switch is described and two tools for examining device reliability, modeling, and on-chip experimentation, are discussed in the case of capacitive MEMS switches. 1D, 2D, and 3D models are presented with emphasis on 3D coupled-field finite-element analysis, including temperature effects. Results and findings from the 3D simulations are reported. In particular, the advantages of employing corrugated membranes in the design of RF MEMS switches are assessed. Their performance in terms of reliability as a function of temperature is quantified. The effects of corrugation on the geometric parameters are discussed in the context of device-design optimization. In order to assess reliability experimentally, the M-test and the membrane deflection experiment (MDE) are reviewed due to their on-chip characteristic and simplicity. Ways in which these experimental/computational methodologies can be combined for identifying material properties and device performance is also highlighted.

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Section: On-chip Experimentation Techniquessupporting

confidence: 91%

Reliability of capacitive RF MEMS switches at high and low temperatures

Zhu

Espinosa

2004

Int J RF and Microwave Comp Aid Eng

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“…Another approach in fixed-fixed beam material properties measurement is to measure the shape of deflected fixed-fixed beam directly and using a finite element model to extract the associated material properties, including residual stresses [148][149][150]. Denhoff [149] formulated the fixed-fixed beam problem and developed formulas to extract both the Young's modulus and the residual stress of a fixed-fixed microstructures using surface profile obtained by profilers.…”

Section: Fixed-fixed Beamsmentioning

confidence: 99%

“…Denhoff [149] formulated the fixed-fixed beam problem and developed formulas to extract both the Young's modulus and the residual stress of a fixed-fixed microstructures using surface profile obtained by profilers. Chen et al [150] used the same type of structure to perform residual stress characetrization. Based on the same principle but a different experimental apparatus, Espinosa et al used a wedge tip nanoindentor to apply load at the center of an aluminum membrane designed for RF application shown in Figure 4.14.…”

Section: Fixed-fixed Beamsmentioning

confidence: 99%

Techniques in Residual Stress Measurement for MEMS and Their Applications

Chen

Mems/Nems

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This chapter mainly focuses on the introduction of residual stress characterization of MEMS materials. The origin and classification of residual stress appearing in thin films and MEMS structures are firstly introduced and the essential background of necessary mechanics, which is utilized to convert the measured data into the final residual stress, is followed. Various types of residual stress characterization techniques conducted in MEMS scale are subsequently addressed and reviewed. Finally, a brief discuss on controlling residual stresses and on taking the advantage of residual stress in MEMS applications is briefly discussed.

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“…One main reason of development of internal stress is difference in thermal expansion coefficients of beam and other materials used for device fabrication (Chen et al 2002). This residual stress significantly alters the design characteristics of actuators and resonators .…”

Section: Introductionmentioning

confidence: 99%

Investigation of the internal stress effects on static and dynamic characteristics of an electrostatically actuated beam for MEMS and NEMS application

2011

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Internal stress is often encountered in fixedfixed beam based devices with micron or sub-micron length scales during device fabrication or operation. In this paper, we have investigated the effects of internal stress on static and dynamic characteristics of an electrostatically actuated cylindrical beam. The beam has been modelled using Euler-Bernoulli theory including the nonlinearities due to beam stretching and electrostatic forcing. The analysis has been carried out by solving the governing differential equations using a Galerkin based multi-modal reduced order modelling technique. A standard collocation based numerical scheme has also been used to confirm the results of the reduced order method. Our study shows that internal stress significantly influences the static and dynamic characteristics of the beam. We also find that, when compressive internal stress is high, it is important to include higher modes in the reduced order model. A design technique to achieve high resonant frequency stability under temperature variation, for electrostatically actuated beam oscillators, has also been proposed as a result of this investigation.

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A new in situ residual stress measurement method for a MEMS thin fixed-fixed beam structure

Cited by 66 publications

References 14 publications

Reliability of capacitive RF MEMS switches at high and low temperatures

Reliability of capacitive RF MEMS switches at high and low temperatures

Techniques in Residual Stress Measurement for MEMS and Their Applications

Investigation of the internal stress effects on static and dynamic characteristics of an electrostatically actuated beam for MEMS and NEMS application

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