A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd

Mu, Fuchen; Xu, Mingzhen; Tan, Cheng; Duan, Xiaorong

doi:10.1016/s0026-2714(01)00118-4

Cited by 4 publications

(1 citation statement)

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“…Various researchers have proposed many stress techniques (Degraeve et al , 1999), but no consensus has been reached and no clear and convincing theory has been established yet to explain the real mechanism of oxide and channel degradation (Chen et al , 2002; Ohata, 2004). Because devices lifetime is a very important criterion in the electronic industry (Mourrain et al , 1998), it is becoming essential to investigate the electrical parameters degradation during ageing (Mu and Xu, 2001; Caster and Bandiera, 2004; Zhang and Yuan, 2001; Gouguenheim and Bravaix, 1999). In this paper, we will present experimental results on the effects of electrical constant voltage stress (CVS) on the switching delay times in power VDMOSFETs devices.…”

Section: Introductionmentioning

confidence: 99%

A faster power MOSFET device with electrical stress treatment

Salame

Habchi

Tazibt

et al. 2005

Microelectronics International

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PurposeThe aim of this paper is to provide some specific information on the effects of DC voltage stress on the current, rise time (Tr) and fall time (Tf), at switching between on and off state of power n‐MOSFET devices.Design/methodology/approachA constant positive electrical stress voltage technique is used to study the devices in this work by giving the gate a positively bias with respect to source and a short circuit of the drain with the grounded source. Voltage stress is gradually increased by automatic 1 V step until it reaches the max tolerated value by the gate dielectric (70 V for device studied in this paper). Response of the device for electrical stress was measured for different doses (stress time).FindingsThe experimental results show that the rise time increases the beginning of stress dose and then it almost stabilises with time, while fall time decreases at first and then starts to increase for higher stress time. The modification of the device switching time parameters were associated to positive oxide charge and interface state Si/SiO2 effects.Originality/valueThis paper offers new information concerning a very important field in microelectronic devices where the switching speed of the components becomes a major requirement. The technique used to improve the device speed has a very low cost and a simple feasibility.

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