Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

“…In ultrathin oxide, under normal operation, the effect of oxide traps will be reduced under the large tunneling current [63]. The trap-assisted or shallow trap-assisted current 9.…”

“…Solid lines indicate the major current or charge transport and dash lines indicate charge transport due to oxide charge trappingdetrapping may exist but are negligible when direct tunneling occurs. From [63]. some reasons (e.g.…”

Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors

“…Hot-carrier induced device degradation has been one of the major concerns in deep submicron devices [10][11][12][13]. The degradation behaviors can be greatly suppressed by using tunneling oxide.…”

“…Process for hundred gigahertz MOS devices has been developed and some simple MOS RFICs have already appeared [7][8][9]. However, challenges still remain to resolve the important issues particularly concerning hotcarrier reliability and accurate device models for circuit designs [10][11][12]. Hot-carrier effects have been the major issues in the long-term stability of threshold voltage and channel mobility in a deep submicron MOS transistor [11][12][13].…”

“…However, challenges still remain to resolve the important issues particularly concerning hotcarrier reliability and accurate device models for circuit designs [10][11][12]. Hot-carrier effects have been the major issues in the long-term stability of threshold voltage and channel mobility in a deep submicron MOS transistor [11][12][13]. Kwan and Deen further found that the hot-carrier effects can induce a significant degradation in the small-signal scattering parameters when the MOS transistors were operated in radio frequency [14,15].…”