A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications

Juan, Trevor Pi-Chun; Chang, C.S.; Lee, J.Y.

doi:10.1109/led.2006.870414

Cited by 60 publications

(16 citation statements)

References 12 publications

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“…However, in addition to these promising results, the temperature stability of organic ferroelectrics in a standard CMOS flow remains questionable, and the commonly used perovskite-based ferroelectrics such as SBT and PZT [6] require special integration schemes due to the sensitivity of the materials toward hydrogen [7] and the large physical height of the gate stack.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, however, it has been shown that crystallization of Si : HfO 2 in the presence of a mechanical confinement, e.g., titanium nitride metal gate (TiN-MG), leads to a noncentrosymmetric orthorhombic phase, which, in turn, produces a spontaneous polarization [8]. Ferroelectricity in HfO 2 , a material that, so far, was only considered as insulating buffer layer in MFIS-FETs [3]- [6], now offers the opportunity to form highly scaled ferroelectric FET and capacitor devices. Great benefit can be drawn from the efforts that have already been made in the field of conventional high-k/metal gate and DRAM storage capacitor integration using HfO 2 -based HKs and TiN-MG.…”

Section: Introductionmentioning

confidence: 99%

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Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Müller

Böscke²,

Schröder

et al. 2012

IEEE Electron Device Lett.

169

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We report the fabrication of completely CMOScompatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin Si : HfO 2 . The program and erase operation of this metal-ferroelectric-insulatorsilicon FET (MFIS) with poly-Si/TiN/Si : HfO 2 /SiO 2 /Si gate stack is compared to the transient switching behavior of a TiN-based metal-ferroelectric-metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to 10 6 s suggest a retention of more than ten years. Index Terms-Hafnium oxide, metal-ferroelectric-insulatorsemiconductor (MFIS) FET, nonvolatile memory.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Müller

Böscke²,

Schröder

et al. 2012

IEEE Electron Device Lett.

169

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“…[1][2][3][4][5] Recently, these FeFET approaches shifted to organic or oxide thin-film transistor ͑TFT͒ electronics adopting plastic and glass substrates, 6-8 since poly͑vinylidene fluoride/trifluoroethylene͒ ͓P͑VDF/TrFE͔͒ copolymer has been found as an accommodating ferroelectric polymer with an induced remnant polarization of ϳ10 C / cm 2 , short switching time of ϳ1 ms, and ease to fabricate by solution process at low temperature. 6,9,10 Our previous work reported on ZnO-based ferroelectric NVM-TFTs with a nanometer thin Al 2 O 3 layer inserted between the ferroelectric P͑VDF/ TrFE͒ and ZnO channel, exhibiting relatively a good memory window and improved retention properties as well.…”

Section: Transparent Photostable Zno Nonvolatile Memory Transistor Wimentioning

confidence: 99%

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

Park

Yun

et al. 2009

Applied Physics Letters

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We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

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“…To enhance the memory retention, the high-k materials such as Al 2 O 3 [12], Si 3 N 4 [13], LaAlO 3 [14], HfO 2 [15][16][17], HfAlO [18,19], CeO 2 [20], MgO [21], Dy 2 O 3 [22], Y 2 O 3 [23,24], HfTaO [25], etc., have been used as a buffer layer between ferroelectric and semiconductor layers to reduce ionic interdiffusion and interfacial charge trapping. So far to now, the retention is not satisfied yet, since the memory window is maintained only for a few days, far shorter from the 10-year requirement.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Au/Pb(Zr0.96Ti0.04)O3/Al2O3/Si antiferroelectric field-effect transistors for memory application

et al. 2010

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Polarization-voltage (P-V) hysteresis loops and polarization retention were studied for Au/Pb(Zr 0.96 Ti 0.04 ) O 3 /Al 2 O 3 /Pt antiferroelectric capacitors with different Al 2 O 3 layer thicknesses. The high-field ferroelectric phase after poling can be pertained to zero external field with the choice of an appropriate Al 2 O 3 layer thickness. At the same time, a strong depolarization field across the Al 2 O 3 layer is generated with the direction opposite to the field across the Pb(Zr 0.96 Ti 0.04 )O 3 layer. The depolarization-field direction can be reversed with the domain switching of the high-field ferroelectric phase, possessing the potential application of antiferroelectric memories. A large memory window of 10 V was observed for Au/Pb(Zr 0.96 Ti 0.04 )O 3 (50 nm)/ Al 2 O 3 (6.3 nm)/n-Si (100) field-effect transistors, as confirmed from the capacitance sweeping under voltages between −19 and +19 V. The high/low capacitance ratio is over 8:1, and the ratio remains stable with time over 4 h after programming voltage of ±19 V at 80°C, in suggestion of the excellent retention of the memory.

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A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications

Cited by 60 publications

References 12 publications

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

Characterization of Au/Pb(Zr0.96Ti0.04)O3/Al2O3/Si antiferroelectric field-effect transistors for memory application

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