Articles you may be interested inElectrical properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -polysilicon-insulator ( Y 2 O 3 ) -silicon capacitors and field-effect transistorsa) Fabrication and characterization of metal-ferroelectric ( PbZr 0.6 Ti 0.4 O 3 ) -insulator ( La 2 O 3 ) -semiconductor capacitors for nonvolatile memory applications The improvement of retention time of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Zr O 2 ) -semiconductor transistors and capacitors by leakage current reduction using surface treatment Appl. Phys. Lett. 91, 192906 (2007); 10.1063/1.2807842 The effect of band offset on the retention properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Dy 2 O 3 , Y 2 O 3 ) -semiconductor capacitors and field effect transistors Appl. Phys. Lett. 91, 122902 (2007); 10.1063/1.2784203 The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors J. Appl. Phys. 98, 044103 (2005);

The temperature dependence of the current conduction mechanisms in Au/Pb(Zr0.53,Ti0.47)O3/Pt (Au/PZT/Pt) metal–insulator–metal thin-film capacitors was investigated. The dominant current conduction mechanism from 300 to 375 K is space-charge-limited current (SCLC) due to holes and changes to Schottky emission in the temperature range of 400 to 500 K above the electric field of 0.2 MV/cm. It is observed that the transition voltage (Vtr) of SCLC conduction decreases with increasing temperature. Shallow hole trap levels vary from 0.3 to 0.19 eV above the valence-band edge as the temperature varies from 300 to 375 K. The trap-filled-limited voltage (VTFL) increases with increasing temperature. The deep trap level extracted from VTFL is positioned at 0.39 eV above the valence-band edge. The Au/PZT barrier height extracted from Schottky emission is 0.85 eV. An energy band diagram of the Au/PZT/Pt system is proposed to explain the current–voltage characteristics.

No abstract

Articles you may be interested inInfluence of work-function of top electrodes on the photovoltaic characteristics of Pb0.95La0.05Zr0.54Ti0.46O3 thin film capacitors Appl. Phys. Lett. 100, 173901 (2012); 10.1063/1.4705425 ( Na 0.5 Bi 0.5 ) 0.87 Pb 0.13 Ti O 3 thin films on different substrates for ferroelectric memory applications Fabrication and characterization of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Dy 2 O 3 )semiconductor capacitors for nonvolatile memory applications The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors J. Appl. Phys. 98, 044103 (2005);Metal-ferroelectric-insulator-semiconductor thin-film capacitors with Pb͑Zr 0.6 ,Ti 0.4 ͒O 3 ͑PZT͒ ferroelectric layer and high-k lanthanum oxide ͑La 2 O 3 ͒ insulator layer were fabricated. The outdiffusion of atoms between La 2 O 3 and silicon was examined by the secondary-ion-mass spectroscopy. The size of memory window as a function of PZT annealing temperature was discussed. The maximum memory window saturated to 0.7 V, which is close to the theoretical memory window ⌬W Ϸ 2d f E c Ϸ 0.8 V with higher annealing temperatures above 700°C. The memory window starts to decrease due to charge injection when the sweep voltage is higher than 5 V at 600°C-annealed samples. The C-V flatband voltage shift ͑⌬V FB ͒ as a function of charge injection was characterized in this work. An energy band diagram of the Al/ PZT/ /La 2 O 3 / p-Si system was proposed to explain the memory window and the flatband voltage shift.

Metal-ferroelectric-insulator-semiconductor structures with BiFenormalO3 as the ferroelectric layer and hafnium oxide (HfnormalO2) as the insulator layer were fabricated and characterized. The size of memory window as a function of HfnormalO2 thickness was discussed. From the X-ray photoelectron spectroscopy results, it was suggested that the volatile bismuth loss reduces with increasing the addition of oxygen during sputtering. The leakage current with respect to the binding energies of Fe2+ and Fe3+ states due to oxygen vacancies was studied. The endurance property shows that there was no deterioration after 109 cycles with the oxygen-rich condition.