Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications

Abstract

Articles you may be interested inElectrical properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -polysilicon-insulator ( Y 2 O 3 ) -silicon capacitors and field-effect transistorsa) Fabrication and characterization of metal-ferroelectric ( PbZr 0.6 Ti 0.4 O 3 ) -insulator ( La 2 O 3 ) -semiconductor capacitors for nonvolatile memory applications The improvement of retention time of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Zr O 2 ) -semiconductor transistors and capacitors by leakage current reduction using surface treatment Appl. Phys. Lett. 91, 192906 (2007); 10.1063/1.2807842 The effect of band offset on the retention properties of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Dy 2 O 3 , Y 2 O 3 ) -semiconductor capacitors and field effect transistors Appl. Phys. Lett. 91, 122902 (2007); 10.1063/1.2784203 The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors J. Appl. Phys. 98, 044103 (2005);

Electrical properties of BaTiO3 based – MFIS heterostructure: Role of semiconductor channel carrier concentration

“…9 Barrier height for the electrons is ∼0.8 eV, for holes it is ∼1.0 eV at STO/ZnO interface while for electrons at Ag/BTO interface it is ∼ 0.9 eV. 10 Obtained high values of band offset suggest that, Ag/BTO/STO/ZnO MFIS structure is a potential candidate for development of FeFET suitable for non-volatile memory application. Fig.…”

Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates

“…Compared the C-V curves with the P-E loops in Fig. 3 [28], where d f , d b , ε f , and ε b are the film thicknesses and the relatively dielectric constants of ferroelectric and buffer layers, respectively. We have measured the ε f of the BNdT is about 220 in MFM structure.…”

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

“…The thickness of the interfacial layer (IL) is about 3 nm, which is close to the literature results of 3.7 nm [26] and 3.1 nm [27] for pure HfO 2 deposited on silicon substrate by the method of atomic layer deposition (ALD). In addition, since the dielectric constant of high-k materials is higher than that of conventional SiO 2 , the voltage drop across the ferroelectric layer of ferroelectric/high-k stack structure becomes large according to the coupling ratio of capacitance for two dielectric films in serial [28]. Fig.…”

“…The superior characteristics of MFIS include a single-device structure, low power consumption and non-destructive read-out operation [8]. The purpose of the insulator layer is to prevent the reaction and inter-diffusion between the ferroelectric layer and silicon substrate as well as to improve the leakage current and retention property [7]. High-k insulator layer is attractive because proportionally larger voltage can be applied across the ferroelectric layer.…”

“…Ferroelectric memory field effect transistors (FEMFETs) with a metal-ferroelectric-insulatorsilicon (MFIS) structure instead of metal-ferroelectric-silicon (MFS) structure have emerged as promising non-volatile memory devices [6]. In this type of memory device, the memory window (MW) of the ferroelectric transistor is predominantly determined by the value of the coercive field (E c ) and the ferroelectric film thickness (d F ): MW $2E c * d F [7]. The superior characteristics of MFIS include a single-device structure, low power consumption and non-destructive read-out operation [8].…”