Improvement on Reliability Properties of Metal-Ferroelectric (BiFeO[sub 3])-Insulator (HfO[sub 2])-Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering

Juan, Trevor Pi-Chun; Lu, Jong‐Hong; Lu, Mingwei

doi:10.1149/1.2994630

Cited by 11 publications

(4 citation statements)

References 30 publications

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“…The observed retention time of Au/BFMO/BTO ͑50 nm͒/Si is comparable to that of Al/BiFeO 3 /HfO 2 /Si. 21 However, it is much shorter than those reported for other MFIS diodes, such as Pt/͑Bi,La͒ 4 Ti 3 O 12 /HfO 2 /Si, 22 Al/PZT/Y 2 O 3 /Si, 3 and Pt/ SrBi 2 Ta 2 O 9 /HfO 2 /Si. 23 The major reason can be attributed to the high remanent polarization ͑ P r ͒ of BFMO, 24 which results in the degradation in retention because of the generation of a high depolarization field.…”

Section: G44mentioning

confidence: 85%

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

Yang

et al. 2010

Electrochem. Solid-State Lett.

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Metal-ferroelectric-insulator-silicon capacitors with a BiFe 0.95 Mn 0.05 O 3 ͑BFMO͒ ferroelectric film and a Bi 2 Ti 2 O 7 ͑BTO͒ insulator have been fabricated. The electrical properties of 300 nm thick BFMO were investigated for different BTO thicknesses. The experimental results show that BFMO/BTO ͑50 nm͒ exhibits the largest maximum memory window. Furthermore, the trapped and mobile positive charges initiate at Ϯ7 and Ϯ8 V, respectively. Compared with BFMO/BTO ͑30 nm͒ and BFMO/BTO ͑70 nm͒, the BFMO/BTO ͑50 nm͒ shows a relatively long retention time.The ferroelectric field-effect transistor with a metalferroelectric-insulator-silicon ͑MFIS͒ structure has emerged as promising nonvolatile memory with nondestructive readout capability. 1 The insertion of the insulator is purposed to prevent the interdiffusion and reaction between the ferroelectric film and Si substrate. Moreover, a proportionally larger voltage is expected to be applied across the ferroelectric film. 2 As in lead zirconate titanate ͑PZT͒ ͑290 nm͒/Y 2 O 3 ͑11.8 nm͒/Si, the distribution of the applied voltage for PZT is as large as 5.22 V at 8 V. 3 For PZT ͑230 nm͒/Dy 2 O 3 ͑20 nm͒, the ratio of the voltage drop across the ferroelectric and insulator is only 1:3. 4 The voltage across the ferroelectric layer in PZT ͑160 nm͒/La 2 O 3 ͑16 nm͒ is also one-fourth of the total applied voltage. 5 These researches show that selecting a high-k and thinner insulating layer is necessary to guarantee a larger electric field across the ferroelectric layer.Because of that, the BiFeO 3 -based films have a low crystallization temperature, a large coercive voltage, and a small dielectric constant; the BiFeO 3 -based MFIS structures have begun to be studied. 6-8 However, the effect of the insulator thickness on memory properties of the MFIS capacitor has rarely been reported. In addition, compared with other ferroelectric films, such as PZT, ͑Bi,La͒ 4 Ti 3 O 12 , and SrBi 2 Ta 2 O 9 , the BiFeO 3 -based film has a larger coercive field, which needs a larger distributed voltage across the ferroelectric film to ensure polarization switching. Therefore, to operate at a low voltage with a saturated electric field applied to the BiFeO 3 -based film, optimization of the buffer layer capacitance is important in MFIS configurations. 4 The Bi 2 Ti 2 O 7 ͑BTO͒ film has a high dielectric constant and a low leakage current density. 8 It has been successfully used as an effective diffusion barrier between the ferroelectric film and the Si substrate. 9,10 In this work, the electrical properties of BiFe 0.95 Mn 0.05 O 3 ͑BFMO͒ ferroelectric film deposited on the BTO insulator of various thicknesses are investigated. The results demonstrate that the Au/BFMO ͑300 nm͒/BTO ͑50 nm͒/Si shows relatively better memory characteristics than the reported BiFeO 3 -based MFIS structures. ExperimentalDifferent from the previous synthesis of the BTO buffer layer, 11 we modified the preparation process. Bismuth nitrate Bi͑NO 3 ͒ 3 ·5H 2 O and titanium isopropoxide Ti͓OCH͑CH 3 ͒ 2 ͔ 4 were selecte...

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Section: G44mentioning

confidence: 85%

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

Yang

et al. 2010

Electrochem. Solid-State Lett.

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Section: Introductionmentioning

confidence: 99%

“…In order to solve this problem, modifications of process conditions [10] and the use of site-engineering technique for BFO films have been considered [11][12][13][14]. In particular, site-engineering technique is effective to reducing the leakage current due to nonstoichiometric compositions of BFO [10]. Isovalent and aliovalent ions such as Cr 3+ (0.76 Å), Mn 3+ (0.72 Å), Nb 5+ (0.64 Å) and Ti 4+ (0.68 Å) were reported to substitute the Fe 3+ (0.64 Å) ion [12][13][14][15][16] due to similar radius of ion size after postannealing.…”

Section: Introductionmentioning

confidence: 99%

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

Juan

Wang

Hsieh

et al. 2015

Microelectronic Engineering

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“…8 In order to solve this problem, modifications of process conditions 9 and the use of site-engineering techniques for BFO films have been considered. 9 Some reports note that Ti was selected as a substitution element for BFO films because the radius of the Ti 3þ ion (0.068 nm) was similar to that of Fe 3þ (0.069 nm). 9 Some reports note that Ti was selected as a substitution element for BFO films because the radius of the Ti 3þ ion (0.068 nm) was similar to that of Fe 3þ (0.069 nm).…”

mentioning

confidence: 99%

Influence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications

Juan¹,

Liu²

2011

Journal of Applied Physics

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Articles you may be interested inFabrication and characterization of metal-ferroelectric ( PbZr 0.6 Ti 0.4 O 3 ) -insulator ( La 2 O 3 )semiconductor capacitors for nonvolatile memory applications Influence of Ar ∕ O 2 ratio on the electrical properties of metal-ferroelectric ( Bi Fe O 3 ) -insulator ( Hf O 2 )semiconductor capacitors fabricated by rf magnetron sputtering Fabrication and characterization of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -Insulator ( Y 2 O 3 )semiconductor field effect transistors for nonvolatile memory applications Characterization of metal-ferroelectric ( Bi Fe O 3 ) -insulator ( Zr O 2 ) -silicon capacitors for nonvolatile memory applications Appl. The charge trapping effect of metal-ferroelectric ( Pb Zr 0.53 Ti 0.47 O 3 ) -insulator ( Hf O 2 ) -silicon capacitors J. Appl. Phys. 98, 044103 (2005);Metal-ferroelectric (Ti-substituted BiFeO 3 )-insulator (HfO 2 )-semiconductor structures have been fabricated via the cosputtering technique. Ti 4þ substitution at the Fe site was investigated through x-ray photoelectron spectra and x-ray diffraction patterns at postannealing temperatures of 500 to 700 C. The capacitance-voltage memory windows as functions of the insulator film thickness and the dc power for Ti were measured and compared. A memory window of 3.1 V was obtained at a sweep voltage of 8 V under O 2 -rich conditions. The leakage current and the charge injection effect, especially gate injection, can be greatly improved by Ti substitution. The effects of the postannealing temperature and the substitution amount on the leakage current can be well explained by the defect reaction model.

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Improvement on Reliability Properties of Metal-Ferroelectric (BiFeO[sub 3])-Insulator (HfO[sub 2])-Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering

Cited by 11 publications

References 30 publications

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

Influence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications

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