A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

Rodríguez-Fernández, Alberto; Muñoz-Gorriz, J.; Suñé, J.; Miranda, E.

doi:10.1016/j.microrel.2018.06.120

Cited by 7 publications

(5 citation statements)

References 19 publications

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“…Any dependence of  S,R on  in (2) requires the use of a circuit simulator. Notice that (2) is a convenient approximation since S,R(V=0)=∞ would be ideally expected (infinite retention time)[13]. In any case, for typical parameter values, the balance equation (1) yields d/dt(V=0)0 as required for the equilibrium state.…”

mentioning

confidence: 99%

Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and Its Equivalent Circuit Representation

Miranda

Suñé

2020

IEEE Trans. Nanotechnology

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A memory state equation consistent with several experimental observations is presented and discussed within the framework of Chua's memristive systems theory. The proposed equation describes the evolution of the memory state corresponding to a bipolar resistive switching device subjected to a variety of electrical stimulus. It is shown that our approach is consistent with: i) the characteristic switching time associated with the ions/vacancies displacement within dielectric films, ii) the SET/RESET voltage dependence on the voltage sweep ramp rate, iii) the hysteretic nature of the memory state as a function of time and voltage for arbitrary input signals, iv) the generation of selfsimilar hysteron loops for different initial conditions, and v) the collapse of the memory window with the increment of the input signal frequency. It is also shown that the proposed equation admits a circuital representation suitable for circuit simulations.

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mentioning

confidence: 99%

Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and Its Equivalent Circuit Representation

Miranda

Suñé

2020

IEEE Trans. Nanotechnology

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“…Notice that (5) provides a finite switching time for V=0V. Instead, as proposed in [21], ( 6) is compatible with the most plausible physical assumption d/dt=0 at V=0V.…”

Section: Model Equations and Physical Considerationsmentioning

confidence: 70%

The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices

Miranda,

Piros,

Aguirre

et al. 2024

IEEE Electron Device Lett.

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Tuning the conductance of a memristive device is a process that requires energy and involves power dissipation. In this letter, the role the memory state programming strategy plays in this connection is investigated. To this end, the device model equations representing the electron transport and metal ion/oxygen vacancy displacement caused by the application of an external signal must be solved consistently. However, if instead of considering the applied voltage as the model input, a memory state trajectory is assumed, the model equations can be decoupled allowing an analytic description of the problem. In order to accomplish this objective a more accurate version of the dynamic memdiode model is used which incorporates additional physical considerations in the characteristic switching times. It is demonstrated that alternative trajectories (concave, convex, and sigmoidal) lead to a variety of energy consumption-maximum dissipated power relationships indicating the key role played by the selected programming strategy. This kind of study contributes to the basic understanding of the writing process of memristors (synaptic weight assignment) and sheds light on its electrical consequences.

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“…Although literature suggests grain boundary formation only for growth temperatures above 320 °C, experimentally, we have found that crystallization can also be induced at temperatures as low as 200 °C, far below the typical back end of line processing temperatures. Additionally, it is known that the switching process in the electroforming as well as in the set and reset operation is accompanied by Joule heating effects exceeding local temperatures of at least 350 °C . At this temperature, a local (uncontrolled) crystallization of the dielectric layer is expected.…”

Section: Introductionmentioning

confidence: 99%

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold

Zintler

Eilhardt

et al. 2019

Adv Elect Materials

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A model device based on an epitaxial stack combination of titanium nitride (111) and monoclinic hafnia (11true1¯) is grown onto a c‐cut Al2O3‐substrate to target the role of grain boundaries in resistive switching. The texture transfer results in 120° in‐plane rotated m‐HfO2 grains, and thus, in a defined subset of allowed grain boundary orientations of high symmetry. These engineered grain boundaries thread the whole dielectric layer, thereby providing predefined breakdown paths for electroforming‐free resistive random access memory devices. Combining X‐ray diffraction and scanning transmission electron microscopy (STEM)–based localized automated crystal orientation mapping (ACOM), a nanoscale picture of crystal growth and grain boundary orientation is obtained. High‐resolution STEM reveals low‐energy grain boundaries with facing (1¯1¯2¯) and (true1¯21) surfaces. The uniform distribution of forming voltages below 2 V—within the operation regime—and the stable switching voltages indicates reduced intra‐ and device‐to‐device variation in grain boundary engineered hafnium‐oxide‐based random access memory devices.

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A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

Cited by 7 publications

References 19 publications

Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and Its Equivalent Circuit Representation

Memristive State Equation for Bipolar Resistive Switching Devices Based on a Dynamic Balance Model and Its Equivalent Circuit Representation

The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

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