A new method for fast statistical measurement of interfacial misfit strain around nano-scale semi-coherent particles

Song, Liubin; Liu, Shaojun; Mao, Xiaodong

doi:10.1039/c7ra05079h

Cited by 13 publications

(9 citation statements)

References 52 publications

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“…Moiré pattern generally appears due to superposition of two different materials with small lattice difference. The lattice mismatch between Bi 2 S 3 and Cu 3 BiS 3 in the core region of the nanorod is minimum, which results in the formation of Moiré pattern. ,, The FFT pattern in Figure S4b demonstrates the closer existence of the two spots belonging to the (211) plane of Bi 2 S 3 ( d spacing 0.301 nm) and (220) plane of Cu 3 BiS 3 ( d spacing 0.309 nm), which makes an angle of nearly 10°. The calculated spacing ( d M ) of the Moiré pattern by masking the two spots is 1.71 nm, as demonstrated in Figure S4c.…”

Section: Results and Discussionmentioning

confidence: 99%

Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu₃BiS_3–xSe_x Nanorods

et al. 2018

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We report a robust methodology for synthesizing monodisperse alloyed Bi 2 S 3−x Se x nanorods (NRs) to tune optical properties with the variation of Se concentration. The intercalation of Cu(I) into the presynthetic Bi 2 S 3−x Se x NRs converted to ternary Cu 3 BiS 3−x Se x NRs via cation exchange process. The transformation was monitored through the formation of core/shell Bi 2 S 3−x Se x / Cu 3 BiS 3−x Se x nanorod heterostructures. Shape anisotropy results in near-infrared bimodal localized surface plasmon resonance (LSPR) in Cu 3 BiS 3−x Se x nanorod over a broad range from 600 to 3500 nm with increase of Se:S ratio. The LSPR sensitivity, defined as the change in the LSPR peak wavelength per unit change in the refractive index (RI) of the medium, was estimated to be 250−350 nm/RI unit, much higher than other copper chalcogenides like Cu 2 S/Cu 2 Se. A fast photodetector was fabricated by Cu 3 BiS 3−x Se x NRs with high photocurrent gain value (∼125) with Se alloying. The intrinsic Cu vacancies and the effective mass of charge carriers play important roles to manipulate optical and electrical properties of Cu 3 BiS 3−x Se x NRs.

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Section: Results and Discussionmentioning

confidence: 99%

Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu₃BiS_3–xSe_x Nanorods

et al. 2018

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“…These particles exhibit interesting features, as depicted in the magnified area shown in the inset (Figure 3D). The nanoparticles shown in the inset of Figure 3D have a large atomic lattice spacing of 2.77 nm caused by interfacial misfit strain dislocations in the nanoparticle, 64 which are most likely aluminum nanoparticles, similar to those shown in Figure 3B.…”

Section: Resultsmentioning

confidence: 67%

Novel Ni-SIRAL Catalyst for Heterogeneous Ethylene Oligomerization

Seufitelli

Gustafson

2022

Ind. Eng. Chem. Res.

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We describe a novel route for producing alkenes and cycloalkanes via the oligomerization of ethylene with a novel Ni-SIRAL catalyst. We report the production of liquid products (ambient conditions) at 50, 100, and 200 °C with subcritical and supercritical ethylene using Ni-SIRAL catalysts with nickel loadings varying from 0.4 to 6.9 wt %, operating at both single-and dualreactor configurations. The highest liquid yield, 43 wt %, with a single reactor, was obtained at supercritical conditions (65 bar), at 200 °C, with a nickel loading of 2.8%. Under supercritical conditions, at 200 °C, the liquid yield increased from 43 to 80 wt % after the addition of a second oligomerization reactor using the Ni-SIRAL catalyst with 2.8 wt % nickel. The ethylene oligomerization under subcritical conditions (40 bar) led to a much lower yield for liquid products than the yield obtained at supercritical conditions at both reactor configurations (single and dual). The dual-reactor configuration proved to be the better configuration for the production of cycloalkanes, with a yield of 7 wt % at subcritical conditions and 10 wt % at supercritical conditions. We proposed a reaction pathway consistent with the experimental data.

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“…These contrasts are a typical indicator for local elastic strain in the crystal lattice, and the origin of them is attributed to coherent precipitates. [ 51,52 ]…”

Section: Resultsmentioning

confidence: 99%

“…These contrasts are a typical indicator for local elastic strain in the crystal lattice, and the origin of them is attributed to coherent precipitates. [51,52] Kumar et al [53] studied the formation of secondary defects in Mg-implanted GaN ([Mg] ¼ 10 19 cm À3 ) after annealing at 1000À1300 °C (5 min, atmospheric pressure) using LAADF-STEM and APT. After annealing at 1100 °C, small Mg clusters started to appear, and their number density and size increase as increasing annealing temperature.…”

Section: Impact Of N-implantation On Mg Activation and Secondary Defe...mentioning

confidence: 99%

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Uedono

Sakurai

Uzuhashi

et al. 2022

Physica Status Solidi (b)

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Herein, the annealing behaviors of defects in ion‐implanted GaN are studied by positron annihilation, cathodoluminescence, scanning transmission electron microscopy, and atom probe tomography. Si or Mg ions are implanted into GaN to obtain 300 nm deep box profiles of the impurities. The samples are annealed up to 1480 °C under a N2 pressure of 1 GPa. For as‐implanted GaN, the major defect species is identified as Ga‐vacancy‐type defects. After annealing above 1000 °C, vacancy clusters are introduced, and they remain even after 1480 °C annealing. For Mg‐implanted GaN with the Mg concentration ([Mg]) ≤ 1018 cm−3, no large change in the depth distribution of Mg is observed before and after annealing at 1400 °C. For the sample with [Mg] = 1019 cm−3, however, Mg diffuses into the bulk, which is attributed to the over‐doping of Mg and their vacancy‐assisted diffusion. The Mg diffusion is suppressed, and the donor–acceptor pair emission is enhanced by sequential N‐implantation, which is attributed to the reaction between Mg and vacancies under a N‐rich condition. For the samples annealed at 1480 °C, an accumulation of Mg around dislocation loops and Mg clustering are enhanced by the N‐implantation

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A new method for fast statistical measurement of interfacial misfit strain around nano-scale semi-coherent particles

Abstract: Nanoscale diffraction contrast reveals strain field distribution at a semi-coherent interface.

Cited by 13 publications

References 52 publications

Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu₃BiS_3–xSe_x Nanorods

Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu₃BiS_3–xSe_x Nanorods

Novel Ni-SIRAL Catalyst for Heterogeneous Ethylene Oligomerization

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

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A new method for fast statistical measurement of interfacial misfit strain around nano-scale semi-coherent particles

Abstract: Nanoscale diffraction contrast reveals strain field distribution at a semi-coherent interface.

Cited by 13 publications

References 52 publications

Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu3BiS3–xSex Nanorods

Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu3BiS3–xSex Nanorods

Novel Ni-SIRAL Catalyst for Heterogeneous Ethylene Oligomerization

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

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Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu₃BiS_3–xSe_x Nanorods

Cation Exchange Mediated Synthesis and Tuning of Bimodal Plasmon in Alloyed Ternary Cu₃BiS_3–xSe_x Nanorods