A new method for quantum device simulation

Sharifi, Mohammad J.; Adibi, Ali

doi:10.1080/002072199132833

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…Although Pspice does not include a built-in model for a resonant tunneling diode, various ways can be used to implement and incorporate a suitable RTD model (Mohan et al 1995, Nikolic and Forshaw 2001, Sharifi and Adibi 1999. Three different ways have been used in the present work to obtain a Pspice-compatible model for the RTD.…”

Section: Introductionmentioning

confidence: 99%

Pspice resonant tunneling diode models and application circuits

Sellai

Al-Hadhrami

Al-Harthi

et al. 2005

International Journal of Electronics

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Using the analogue behavioural modelling capabilities of Pspice, the currentvoltage characteristics and the large-signal equivalent circuit of a resonant tunneling diode are exploited to create a Pspice compatible model for the diode. The model is used, with very few other components, in the simulation of a number of circuit applications, including a sinusoidal wave generator, a frequency multiplier and three state logic circuits. The simulated circuit details, the related waveforms and three-state logic operations are described. The circuits are characterized mainly by their reduced complexity and ease of analysis.

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Section: Introductionmentioning

confidence: 99%

Pspice resonant tunneling diode models and application circuits

Sellai

Al-Hadhrami

Al-Harthi

et al. 2005

International Journal of Electronics

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“…Resonant-tunneling diodes (RTDs) are of interest for use in different applications [1,2]. The main reasons are that RTDs exhibit a negative differential resistance (NDR) region in their current-voltage characteristics and in comparison to conventional devices, take advantage of their higher speed of operation and lower power dissipation and possibility of operation at room temperature [3], and can increase circuit integration density because they usually reduce device count per circuit function.…”

Section: Introductionmentioning

confidence: 99%

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Sharifi

Bahrepour

2009

VLSI Design

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A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

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Physic-Based Imaginary Potential and Incoherent Current Models for RTD Simulation Using Optical Model

Sharifi¹,

Navi²

2008

J. of Applied Sciences

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A new method for quantum device simulation

Cited by 3 publications

References 8 publications

Pspice resonant tunneling diode models and application circuits

Pspice resonant tunneling diode models and application circuits

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Physic-Based Imaginary Potential and Incoherent Current Models for RTD Simulation Using Optical Model

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