A new method to measure pulsed RF time domain waveforms with a sub-sampling system

Reveyrand, Tibault; Popović, Zoya

doi:10.1109/mwsym.2012.6259438

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…The gate was biased slightly above pinch-off and the drain bias voltage was 50 V. De-embedded measurements at the package planes were obtained by using a Thru-Reflect-Line (TRL) calibration. Large signal measurements were made by using a PNA-X and a Large Signal Network Analyzer (LSNA) associated with a specific method of pulse measurements [10]. Two different measurement steps were performed.…”

Section: C) Power Measurements Of the 20 W Packaged Gan Hemtmentioning

confidence: 99%

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Chéron

Campovecchio

Barataud

et al. 2013

Int. J. Microw. Wireless Technol.

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International audienceThis paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50V environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package

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Section: C) Power Measurements Of the 20 W Packaged Gan Hemtmentioning

confidence: 99%

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Chéron

Campovecchio

Barataud

et al. 2013

Int. J. Microw. Wireless Technol.

Self Cite

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show abstract

“…Customized measurements test benches like LSNA [5], [6] NVNA [7] have been developed to measure pulsed RF CW time-domain voltage and current waveforms at both ports of non-linear devices. These instruments measure only the CW signal and its associated harmonics within the pulse.…”

Section: Introductionmentioning

confidence: 99%

High resolution wideband calibration procedure for RF time-domain measurement of non-linear devices

El-Akhdar

Ahmed

Reveyrand

et al. 2013

81st ARFTG Microwave Measurement Conference

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A new method to measure pulsed RF time domain waveforms with a sub-sampling system

Cited by 2 publications

References 6 publications

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies

High resolution wideband calibration procedure for RF time-domain measurement of non-linear devices

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