A New Model for Light Output Degradation of Direct Band Gap Emitters

Abstract

A new quantitative model which describes the light output degradation of direct band gap GaAs l-xPx emitters has been developed.This model provides a non-destructive screening technique-whereby the degradation can be calculated from the initial forward-I-V characteristic. Good agreement with experimental results for 700nm optocoupler emitters was demonstrated.

Characterization of proton damage in light-emitting diodes

“…Unlike conventional semiconductors, unirradiated LEDs exhibit continual degradation when they are operated over extended time periods [10]. GaAs and AlGaAs devices are particularly affected.…”

“…Another important factor is degradation during normal operation (wearout) which causes gradual decrease in light output [10]. Wearout degradation produces changes in LED characteristics that have many similarities to displacement damage.…”