A new modeling approach for amorphous silicon passivated front contact for thin silicon solar cells

Photovoltaic properties of new solar cell based on ideal cubic NaNbO3 thin films: a combined experimental and density functional theory study

“…Compared to the conventional solar cells, as a new material for energy conversion, NNO exhibited an excellent efficiency that can be further enhanced by several methods such as, the improvement of the absorption coefficient, the front and back passivation, interface passivation and the front and back contact optimization. 47–50 In fact, the charge recombination can be reduced by the interface passivation by oxide deposited layer covered with other dielectric material layer 47,51 where SiO 2 is used as an interlayer to reduce recombination losses at the front metal-silicon contact of solar cells. 52,53 Thus, the agreement between the experimental and theoretical data of the structural and optical properties presents a successful prediction of the photovoltaic behavior that motivates to continue the experimental process and fabricate a first NNO based solar cell.…”

Analysis increase in the efficiency of a-Si: H solar cell due to the addition of an intrinsic layer to the p-i-n structure by ellipsometric spectroscopy

“…Therefore, several researchers then developed the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique to overcome this problem. Material a-Si: H grown with PECVD by utilizing plasma as a growing medium (Bougoffa et al, 2017). This technique uses Silan gas (SiH 4 ) as the source gas, which is 10% in Hydrogen (H 2 ) gas and an amorphous silicon material with a hydrogen content of 10-20% is obtained (King et al, 2011).…”