A new MOVPE technique for the growth of highly uniform CMT

Tunnicliffe, Jon; Irvine, S.J.C.; Dosser, O. D.; Mullin, J. B.

doi:10.1016/0022-0248(84)90423-8

Cited by 221 publications

(32 citation statements)

References 19 publications

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“…Arsenic is readily incorporated in MCT grown by atmospheric-pressure metalorganic vapor-phase epitaxy (MOVPE) using the interdiffused multilayer process (IMP) 20 and a number of parameters have been identified which enable dopant activation to a greater or lesser extent. These include the need for the dimethylcadmium (Me 2 Cd) concentration to be greater than that of the tellurium precursor during the CdTe growth cycle and postgrowth annealing schedules, including the aforementioned hightemperature and mercury vacancy-filling anneals.…”

Section: Literature Review Of Arsenic Doping In Mctmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

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Section: Literature Review Of Arsenic Doping In Mctmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

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“…Typically, a 3-to 4-lm-thick CdTe layer was used as a buffer layer reducing stress caused by a crystal lattice misfit between a GaAs substrate and a HgCdTe epitaxial layer structure. 40 The growth was carried out at a temperature of 350°C and mercury zone at 210°C using the interdiffused multilayer process (IMP) 41,42 in a horizontal MOCVD AIX 200 reactor. Hydrogen was used as a carrier gas.…”

Section: Numerical and Experimental Resultsmentioning

confidence: 99%

The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

Jóźwikowski

Piotrowski

Jóźwikowska

et al. 2017

Journal of Elec Materi

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We present the results of numerical simulations and experimental data of band gap-engineered higher operating temperature mercury cadmium telluride barrier photodiodes working in a middle wavelength infrared radiation and a long wavelength infrared radiation range of an infrared radiation spectrum. Detailed numerical calculations of the detector performance were made with our own computer software taking into account Shockley Hall Read, Auger, band-to-band and trap-assisted tunneling and dislocation-related currents. We have also simulated a fluctuation phenomena by using our Langevin-like numerical method to analyze shot, diffusion, generation-recombination and 1/f noise.

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“…n-type Hg 1−x Cd x Te wafers (x ≈ 0.26) used for the experiments were grown by the inter-diffused multi-layer process (IMP) metal-organic vapor phase epitaxy (MOVPE) [7]. In IMP-MOVPE, several tens of thin CdTe and HgTe layers were grown alternately and diffused to result in homogeneous HgCdTe.…”

Section: Methodsmentioning

confidence: 99%

The effect of ammonium sulfide treatment on interfacial properties in ZnS/HgCdTe heterostructure

Jung

Yoon

Suh³

et al. 2006

J Electroceram

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The semiconductor-passivating layer interface, as well as the dielectric properties of the passivants, plays an important role in HgCdTe based photodiodes. ZnS is a commonly uses surface passivant for HgCdTe. The effects of sulfidation on the HgCdTe surface and interfacial characteristics of metal/ZnS/HgCdTe structures are studied. The ZnS layer was deposited by thermal evaporation after sulfidation of HgCdTe substrates. The interfacial properties of the metal insulator semiconductor (MIS) structures were determined by capacitance-voltage (C-V) measurements. A comparison of an untreated and a sulfide treated MIS capacitor showed that the fixed charge density and slow state density were 2 and 7 times lower in the sulfide treated specimens than in the untreated specimens. Sulfidation results in a decrease in the concentration of contaminants originating from the native oxide-covered HgCdTe substrates. This reduction may be due to the formation of S-S or II-S bonds at the surface layer. These bonds might act as barriers against native oxide formation when (NH 4 ) 2 S x treated HgCdTe substrates are exposed to air.

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A new MOVPE technique for the growth of highly uniform CMT

Cited by 221 publications

References 19 publications

As Doping in (Hg,Cd)Te: An Alternative Point of View

As Doping in (Hg,Cd)Te: An Alternative Point of View

The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

The effect of ammonium sulfide treatment on interfacial properties in ZnS/HgCdTe heterostructure

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