A new package with kelvin source connection for increasing power density in power electronics design

Crisafulli, Vittorio

doi:10.1109/epe.2015.7309198

Cited by 22 publications

(6 citation statements)

References 6 publications

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“…This paragraph describes the activities undertaken in order to measure the turn-on and turn-off switching energies of one MOSFET of the HT-3201 power module, which scheme is given in Fig. 5 [8].Each transistor corresponds to a 4leaded component, the kelvin source connection contributing to better system performance, absent in 3leaded components [11]. The module is tested along with its gate driver ITGD2-3001 from CREE®.…”

Section: Sic Mosfet Switching Characterizationmentioning

confidence: 99%

High Performance SiC MOSFETs for Fault Tolerant Applications

Onambele¹,

Mpanda²,

Giacchetti³

2024

RE&PQJ

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Harsh environment applications are characterized by exceptional constraints regarding temperature, volume, faulttolerance, efficiency, etc. As the introduction of power electronics in such systems is constantly growing, research activities are essential to get more knowledge on the capabilities of available technologies for such applications: aerospace and renewable energies. This paper evaluates the performance of a Silicon Carbide (SiC) MOSFET transistor for a multiphase power converter for fault-tolerant applications. Two methods are carried out in this study: first, the model provided by the manufacturer is used in simulation for a fault-tolerant electric drive application, then in the same operating conditions, the power module is characterized and its performance evaluated. Both methods lead to high system efficiency around 97-98% for a 1200V-400A SiC MOSFET transistor module integrated in a 120kW-100A 6-phase modular inverter.

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Section: Sic Mosfet Switching Characterizationmentioning

confidence: 99%

High Performance SiC MOSFETs for Fault Tolerant Applications

Onambele¹,

Mpanda²,

Giacchetti³

2024

RE&PQJ

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“…In order not to operate at the audible frequency value, the operating frequency values of household induction hobs are not preferred below the 20 kHz threshold frequency value [49][50][51]. On the other hand, to increase the switching frequency will increase the switching losses of the semiconductors used [4,49,52].…”

Section: Defining Of the Time Intervals T On And T Off The Source Vo...mentioning

confidence: 99%

A Simplified Design Method for Quasi-Resonant Inverter Used in Induction Hob

Ozturk

2023

Electronics

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Induction heating (IH) technology is widely recognized and utilized in residential applications due to its high efficiency and safe operating characteristics. Resonant inverter circuits are widely used in IH systems because of their high efficiency and ability to perform soft switching. Among the various resonant inverters used in IH systems, the single-switch quasi-resonant (SSQR) inverter topology is typically preferred for low-cost and low-output-power applications. Despite its cost advantage, the SSQR topology has a relatively narrow soft-switching range, which can be unstable depending on the electrical parameters of the load and the resonant converter circuit. Accurately determining the capacitance value of the resonant capacitor and the inductance value of the induction coil, which are the key circuit elements of the SSQR induction cooker, is crucial for designing a reliable, efficient, and durable cooking system. In other words, there exists a critical relationship between the resonant converter circuit parameters, load characteristics, and safe operating conditions. Additionally, when considering closed-loop control methods used for power control and safety, selecting appropriate resonant circuit elements becomes vital in ensuring both reliable and efficient operation. This paper focuses on a novel and simplified design method for the SSQR inverter utilized in household appliances. The proposed method and its advantages in terms of the safe operating area of the switch are theoretically investigated and verified through simulations and prototype circuits.

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“…• Manufacturers offer some devices with the terminals kelvin emitter(EK) or kelvin source(SK), which are also considered in this paper. These terminals reduce gate drive loop inductance, thus reduce switching energy losses [26]. A total of 147 devices are considered for the design optimization, and the details such as voltage classes, current ampere rating range, price range, device count by manufacturer wise are provided in Table .1.…”

Section: ) Power Semiconductor Device Technologymentioning

confidence: 99%

Multi-Objective Hierarchical Optimization: A Design Framework for Grid-Connected Interleaved H-Bridges

Vaddipalli

Lopes

2021

IEEE Open J. Ind. Electron. Soc.

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The paralleling of power converters connected to the grid for power-sharing is a widely used technique. In this context, the design framework for a low-cost, lightweight, compact and high-performance optimum configuration is an open problem. This paper proposes an innovative Multi-Objective Hierarchical Optimization Design Framework (MO-HO-DF) for an AC grid interface with N interleaved H-bridges, each with M parallel "to-be-determined" switches, connected through coupling inductances (L f ). A total of eight figures of merit (FOMs) were identified for the design framework optimization. A rigorous model of the power electronic system is presented. Next, a highly computationally efficient algorithm for the estimation of the required frequency modulation ratio (m f ) to meet current harmonic performance requirements for any given configuration is proposed. Then, the concept and implementation of the algorithm are presented for the MO-HO-DF. The effectiveness of the design optimization framework is demonstrated by comparing it to a base case solution. Finally, the design calculations are validated via PLECS simulation with manufacturer-provided 3D power semiconductor models that include thermal modelling.

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A new package with kelvin source connection for increasing power density in power electronics design

Cited by 22 publications

References 6 publications

High Performance SiC MOSFETs for Fault Tolerant Applications

High Performance SiC MOSFETs for Fault Tolerant Applications

A Simplified Design Method for Quasi-Resonant Inverter Used in Induction Hob

Multi-Objective Hierarchical Optimization: A Design Framework for Grid-Connected Interleaved H-Bridges

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