A new physical-based compact model of floating-gate EEPROM cells

Impact of stress on Fowler–Nordheim parameters effects on EEPROM threshold voltage

“…The model used in simulation is a compact model described in [21] and includes a static and a dynamic model. First, we simulated the electrical behavior of a fresh EEPROM cell by applying write and erase pulses with different amplitudes to verify agreement between experimental data and simulation concerning V T values, represented in Fig.…”

Deterioration of stressed oxides: Application to the prediction of a non-volatile memory cell endurance

“…Also, we assume that the surface potential and the flat band voltage at the drain-tunnel oxide interface can be neglected with respect to the voltage drop, V tun , across the tunnel oxide, yielding the following expression of the electric field across the tunnel oxide [14]:…”

Non-volatile memory cell design: Coupling ratio impact on tunnel oxide reliability

“…Where V T0 is the initial threshold voltage, Q FG is the floating gate charge, C pp is the inter-poly capacitance [2,6].…”

“…To estimate the floating gate voltage, designers [6] usually use the coupling ratio (K e ) in erase mode, calculated with Eq. (3).…”

“…(4) is not valid. We need to use the physical compact model developed in the lab [6] to simulate the dynamic electric properties of the cell. This charge sheet model uses a the charge neutrality including the charge trapped on the floating gate in order to determine the surface potential.…”