Non-volatile memory cell design: Coupling ratio impact on tunnel oxide reliability

In order to pre-evaluate the necessary time needed to write a flash cell memory, we use a simplified expression for the Fowler Nordheim injecting current during the erase mode, which allows us to find a relationship between the applied voltages and the resulting threshold voltage. We show in this study that the absolute value of the derivative of the threshold voltage is equal to the positive signal slope applied on the control gate. We validate this assumption by measurements on samples provided by STmicroelectronics

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Non-volatile memory cell design: Coupling ratio impact on tunnel oxide reliability

Cited by 3 publications

References 4 publications

Integrated reliability in EEPROM nonvolatile memory cell design

Integrated reliability in EEPROM nonvolatile memory cell design

Fowler-nordheim erasing time prediction in flash memory

Variation of flash memory threshold voltage correlated with applied voltage slope in fowler nordheim erase mode

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