A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers

Kawahara, J.; Nakano, Akinori; Kunimi, Nobutaka; Kinoshita, Keizo; Hayashi, Yoshihiro; Ishikawa, Akira; Seino, Yutaka; Ogata, Toru; Takahashi, Hiroshi; Sonoda, Y.; Yoshino, T.; Goto, Takashi; Takada, S.; Ichikawa, R.; Miyoshi, Hidenori; Matsuo, Hiroki; Adachi, S.; Kikkawa, Takamaro

doi:10.1109/iedm.2003.1269185

“…In order to solve these problems, a plasma polymerization technology has been developed, where vaporized molecules of organic silica, such as divinyl siloxane-benzocyclobutene (DVS-BCB) as a matrix monomer is activated with low energy electrons in a He-plasma. 5,6) The plasma polymerization technique had a drawback in controlling the properties of the deposited films. 7,8) Although the properties of the film can be changed by the deposition conditions, the controllable range was limited when employing the single-species monomer.…”

Section: Introductionmentioning

confidence: 99%

Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-k/Cu Interconnects

Kawahara

¹

,

Nakano

²

,

Kunimi

³

et al. 2007

jjap

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A plasma-enhanced co-polymerization technique was developed for low-k/Cu damascene integration on 300 mm wafers. This technique enables us to control dielectric film properties by introducing organo-siloxane and hydrocarbon into a He-plasma. The growth rate of the low-k film derived from divinyl siloxane–benzocyclobutene (DVS–BCB) as a matrix monomer is increased by adding C2H2 as a deposition acceleration monomer and the Young's modulus was enhanced by adding diisopropenylbenzene (DIPB) or divinylbenzene (DVB) as a reinforcement monomer. Cu damascene interconnects with plasma polymerized low-k films were successfully fabricated on 300 mm wafers.

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“…1 was used for depositing DVS-BCB films by plasma-enhanced polymerization (PEP). 3) As indicated in Fig. 2, the liquid DVS-BCB monomer was vaporized and introduced into the reaction chamber.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Deposition proceeds by keeping the BCB monomer structure in the film, which is the distinctive feature of PEP compared with plasma-enhanced chemical vapor deposition (PECVD). 3) A blanket BCB film with a thickness of 200 nm was deposited on Si wafers by PEP. From the capacitancevoltage measurements, the k of BCB was determined to be 2.6.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Plasma-Enhanced-Polymerization Thin-Film as a Drift Barrier for Cu Ions

Yoshino

¹

,

Hata

²

,

Kawahara

³

et al. 2007

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The barrier properties of divinyl siloxane-benzocyclobutene (DVS-BCB) films formed by plasma-enhanced polymerization were studied for ultralow-k porous silica (po-SiO) interlayer dielectrics. Time-dependent dielectric breakdown (TDDB) measurements of blanket Cu/BCB/Si metal-insulator-semiconductor (MIS) capacitors showed no polarity dependence of the bias-temperature stresses at 200 C under 2 MV/cm, indicating that Cu ions hardly drifted into the BCB film with the positive bias stress. On the other hand, Cu/SiOC/Si MIS capacitors under the positively biased Cu showed a significant degradation in the TDDB lifetime compared with the negative bias case. The barrier effect of the thin BCB was confirmed from the TDDB measurements using Cu/BCB/ultralow-k-po-SiO/Si stacked MIS structures. The TDDB lifetime of the stacked MIS capacitor was improved more than 30-fold by the use of 15-nm-thick BCB on po-SiO. The electric field and temperature dependences of the TDDB lifetime of the stacked MIS structure indicated that the TDDB lifetime of po-SiO capped with 15-nm-thick BCB is longer than 10 years at 125 C and 1.4 MV/cm. We conclude that the barrier property of BCB that is as thin as 15 nm is effective for preventing Cu ion drift into interlayer dielectrics.

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“…1) Barriermetal-free Cu damascene structures were actually fabricated with BCB ILD. 2,3) The value of the specific dielectric constant k of BCB remains, however, in the range of 2.6 -2.8. In the advanced backend of the line process, further reduction in k is needed to reduce the interconnect signal delay.…”

Section: Introductionmentioning

confidence: 99%

Computer-aided tomography and physical experiment

Pikalov¹,

1983

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The barrier properties of divinyl siloxane-benzocyclobutene (DVS-BCB) films formed by plasma-enhanced polymerization were studied for ultralow-k porous silica (po-SiO) interlayer dielectrics. Time-dependent dielectric breakdown (TDDB) measurements of blanket Cu/BCB/Si metal-insulator-semiconductor (MIS) capacitors showed no polarity dependence of the bias-temperature stresses at 200 C under 2 MV/cm, indicating that Cu ions hardly drifted into the BCB film with the positive bias stress. On the other hand, Cu/SiOC/Si MIS capacitors under the positively biased Cu showed a significant degradation in the TDDB lifetime compared with the negative bias case. The barrier effect of the thin BCB was confirmed from the TDDB measurements using Cu/BCB/ultralow-k-po-SiO/Si stacked MIS structures. The TDDB lifetime of the stacked MIS capacitor was improved more than 30-fold by the use of 15-nm-thick BCB on po-SiO. The electric field and temperature dependences of the TDDB lifetime of the stacked MIS structure indicated that the TDDB lifetime of po-SiO capped with 15-nm-thick BCB is longer than 10 years at 125 C and 1.4 MV/cm. We conclude that the barrier property of BCB that is as thin as 15 nm is effective for preventing Cu ion drift into interlayer dielectrics.

show abstract

A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers

Cited by 6 publications

References 1 publication

Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-k/Cu Interconnects

Plasma-Enhanced Co-Polymerization of Organo-siloxane and Hydrocarbon for Low-k/Cu Interconnects

Plasma-Enhanced-Polymerization Thin-Film as a Drift Barrier for Cu Ions

Computer-aided tomography and physical experiment

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