A New Relation between Electrical Resistance and Energy of Magnetisation

Gerlāch, Wālther; Englert, Erno

doi:10.1038/128151a0

Cited by 4 publications

(2 citation statements)

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“…Magnetization fluctuations in a ferromagnet close to T C result in a contribution to the electrical resistivity, which in the lowest order approximation is proportional to [1 − m ( H , T ) 2 ] 18 , 20 – 23 . Hence, the relationship between the magnetoresistance and the magnetization in the critical region can be described as: where .…”

Section: Resultsmentioning

confidence: 99%

“…Here we extend this study by considering also the field-dependence of magnetization and magnetoresistance in the critical region. While the close connection between magnetization and electrical resistance is very well established 18 , critical magnetoresistance has been little-studied in dilute ferromagnetic semiconductors 19 . The increase of magnetic susceptibility around T C leads to an increased ordering of magnetic moments and decreased charge carrier scattering which manifests itself as a negative magnetoresistance ( MR ).…”

Section: Introductionmentioning

confidence: 99%

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Magnetism and magnetoresistance in the critical region of a dilute ferromagnet

Wang

Howells

Marshall

et al. 2021

Sci Rep

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We present detailed experimental measurements and simulations of the field-dependent magnetization and magnetoresistance in the vicinity of the Curie temperature in the highly disordered dilute ferromagnetic semiconductor (Ga,Mn)As. The observed dependence of the magnetization on external magnetic field and temperature is consistent with three-dimensional Heisenberg equation of state calculations including a narrow distribution of critical temperatures. The magnetoresistance shows a peak at the Curie temperature due to the suppression of magnetic scattering in an applied magnetic field, which is well-described by considering changes in the square of the magnetization induced by the magnetic field.

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