A new reliability model for post-cycling charge retention of flash memories

Belgal, H.; Righos, Nick; Kalastirsky, I.; Peterson, John J.; Shiner, R. E.; Mielke, N.

doi:10.1109/relphy.2002.996604

Cited by 72 publications

(47 citation statements)

References 35 publications

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“…From there, reliability extrapolations can be performed to estimate the number of failures. Other extrapolations procedures have been proposed, based on the same model or on empirical approximations [195][196][197][198][199][200][201][202][203], while addressing the optimization of the P/E waveforms and cell design [204][205][206][207]. Like all reliability issues, SILC becomes more of a concern in scaled MLCs or TLCs, because of the reduced separation between V T levels and smaller floating-gate capacitance, meaning that fewer electrons are stored into the floating gate and that even microscopic leakage currents can cause significant damage.…”

Section: Retention After Cycling and Silcmentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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Section: Retention After Cycling and Silcmentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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“…In our case, the compact model developed in [10] based on an exponential I-V characteristic is used. In this model, V T variation between cells is explained by parameters modulation that acts as V T -shift of the cell threshold distribution.…”

Section: Cell Reliability Modelingmentioning

confidence: 99%

“…In this model, V T variation between cells is explained by parameters modulation that acts as V T -shift of the cell threshold distribution. As in [10], the following assumptions on the V T evolution are made:…”

Section: Cell Reliability Modelingmentioning

confidence: 99%

“…Charge loss and cycling degradations are not taken into account even if multiple models for Flash reliability prediction exist [10], [11]. In this paper, we compare different methods to enhance Flash reliability using ECC, online redundancy, and V T analysis.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, we compare different methods to enhance Flash reliability using ECC, online redundancy, and V T analysis. For this purpose, a memory array model using the compact model exposed in [10] has been developed. The aim of this work is to help designers to choose the most efficient 978-3-9810801-2-4/DATE07 © 2007 EDAA reliability scheme to implement depending on the technology, memory architecture and reliability objective.…”

Section: Introductionmentioning

confidence: 99%

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Evaluation of Design for Reliability Techniques in Embedded Flash Memories

Godard¹,

Daga²,

Торрес³

et al. 2007

2007 Design, Automation &Amp; Test in Europe Conference &Amp; Exhibition

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Further Possibilities of FG Device Compact Models

Floating Gate Devices: Operation and Compact Modeling

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Reliability prediction and statisticsThe main purpose of this and the next Chapters is to show the new possibilities and application fields of the CM of FG memory devices from a designer's point of view.As we will show, CMs of FG memories allow not only to reproduce the electrical behavior of FG memory cells in read, program and erase conditions, but also to perform some predictions about reliability (data retention, program and read disturbs) of FG memory devices. Furthermore, accurate models of FG devices permit to gain deep insights into the effects of device parameter statistics, which is strictly related to the whole manufacturing flow, on the electrical performances of FG memories. Moreover the models constitute a powerful tool to optimize program and erase algorithms, and generally to speed-up and simplify the design of the circuitry needed to manage read, program and erase FG memory operations.Note that the above possibilities and applications illustrate new uses of FG memory CMs that can help both process engineers and circuit designers to develop NV memory product featuring the best tradeoff between reliability and performance.The chapter is organized as follows. In Paragraph 5.1, it will be described how the charge balance model can be extended to simulate FG memory reliability. Particularly, as done in Chapter 4, one or more voltage controlled current sources modeling the leakage current induced by the aging of the gate oxide will be added to the framework of the model to simulate data retention and program/read disturbs of FG memory devices.In Paragraph 5.2, it will be shown how FG memory CMs can help designers to make the design phase robust against statistical variations of device parameters. In fact, good CMs must take into account and model correctly the statistical variations of devices' dimensions and performances, thus aiding the designer to cope more effectively with the process induced variability of electrical devices.

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A new reliability model for post-cycling charge retention of flash memories

Cited by 72 publications

References 35 publications

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Evaluation of Design for Reliability Techniques in Embedded Flash Memories

Further Possibilities of FG Device Compact Models

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