A New Resist for Area Selective Atomic and Molecular Layer Deposition on Metal–Dielectric Patterns

Hashemi, Fatemeh; Prasittichai, Chaiya; Bent, Stacey F.

doi:10.1021/jp502669f

Cited by 105 publications

(161 citation statements)

References 40 publications

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“…Second, the deposition time to form a well-packed SAM passivation layer that can prevent ALD has been shown to be above 48 hours for a variety of SAMs, including both ODPA and octadecyltrichlorosilane (ODTS). 14,[20][21][22] Although the water contact angle (WCA) on the substrate increases dramatically when treated by ODPA or ODTS solution even for 1 hour, confirming the formation of a hydrophobic SAM on the surface, it has been found that this monolayer is not capable of preventing ALD. 20,21 The need for long SAM exposure makes the selective deposition process using SAMs very time consuming.…”

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confidence: 99%

“…[15][16][17][18][19] Hence, based on this intrinsically selective adsorption, area selective ALD of ZnO on ODPA-treated Cu/SiO 2 patterned substrates has been achieved for film thicknesses up to 36 nm. 20 However, even with a successful system like ODPA on Cu/SiO 2 , there are several factors limiting the use of SAM passivation layers for area selective ALD. First, due to the diverse chemical nature of the precursors involved in dielectric film deposition, the selectivity achieved using SAMs as the blocking layer may be limited to only few nanometers of dielectric films, depending on the material.…”

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confidence: 99%

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Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

2015

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Nanoscale patterning of materials is widely used in a variety of device applications. Area selective atomic layer deposition (ALD) has shown promise for deposition of patterned structures with subnanometer thickness control. However, the current process is limited in its ability to achieve good selectivity for thicker films formed at higher number of ALD cycles. In this report, we demonstrate a strategy for achieving selective film deposition via a self-correcting process on patterned Cu/SiO2 substrates. We employ the intrinsically selective adsorption of octadecylphosphonic acid self-assembled monolayers on Cu over SiO2 surfaces to selectively create a resist layer only on Cu. ALD is then performed on the patterns to deposit a dielectric film. A mild etchant is subsequently used to selectively remove any residual dielectric film deposited on the Cu surface while leaving the dielectric film on SiO2 unaffected. The selectivity achieved after this treatment, measured by compositional analysis, is found to be 10 times greater than for conventional area selective ALD.

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confidence: 99%

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Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

2015

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“…Bent group recently succeeded in the area selective MLD of polyurea films on a Si substrate using patterned SAM of octadecyltrichlorosilane that blocks MLD on the substrate . They also performed the area selective MLD using patterned octadecylphosphonic acid SAM as a resist layer . These approaches would be promising to apply MLD to integrated photonic/electronic devices.…”

Section: Selective Organic Film Growthmentioning

confidence: 99%

Molecular Layer Deposition (MLD): Monomolecular‐Step Growth of Polymers with Designated Sequences

Yoshimura¹

2016

Macromolecular Symposia

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Summary: Tailored organic thin films with designated molecular arrangements are expected to provide a variety of photonic/electronic devices due to their ability to optimize the performance or to generate new functions by controlling the electron wavefunction shapes. Molecular Layer Deposition (MLD), which enables monomolecular-step organic film growth, is one of the promising fabrication processes of tailored organic thin films. In the present report, first, the concept and an experimental demonstration of MLD are described. Next, after three featured capabilities of MLD, namely, ultra-thin/conformal, tailored, and selective organic film growth are presented, applications of MLD based on these capabilities are reviewed, emphasizing polymer multiple quantum dots we have developed. Finally, conceptual proposal of MLD for the molecular targeted drug delivery for cancer therapy is suggested.

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“…Excellent demonstrations using such practices on metal/dielectric (Cu/SiO 2 ) line features have been demonstrated by Bent and co‐workers. For example, octadecylphosphonic acid has been employed as an area selective resist layer to protect Cu for the effective deposition of ZnO using ALD or polyurea with MLD . The process was subsequently adapted with a selective etching step that allows for a “self‐correcting” strategy .…”

Section: Introductionmentioning

confidence: 99%

Area Selective Polymer Brush Deposition

Cummins

Shaw

Morris

2017

Macromol. Rapid Commun.

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Polymer brush films with chemical functionality to attach to site specific substrate areas are introduced for area selective deposition (ASD) application. It is demonstrated that polymer brushes with chemically defined end sites can be selectively bound to copper-specific regions of patterned copper/silica (Cu/SiO ) substrates. The process described overcomes various limitations of currently used technology including cost, complexity, and throughput, with potential implications for future electronic devices and nanomanufacturing. A comparative study of amine-terminated polystyrene and amine-terminated poly-2-vinyl pyridine polymer brushes (i.e., PS-NH and P2VP-NH ) with similar molecular weights display contrasting behavior on patterned Cu/SiO line features. Further, a thiol terminated poly-2-vinyl pyridine polymer brush (i.e., P2VP-SH) is investigated as a direct spin-on process to fabricate a metal oxide layer atop Cu areas only. The results presented here detail a novel methodology and open a new exciting process for ASD practices that can facilitate the precise deposition of dense metal, semiconductor, or dielectric films. We also discuss the applicability of polymer brushes to ASD uses going forward.

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A New Resist for Area Selective Atomic and Molecular Layer Deposition on Metal–Dielectric Patterns

Cited by 105 publications

References 40 publications

Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

Molecular Layer Deposition (MLD): Monomolecular‐Step Growth of Polymers with Designated Sequences

Area Selective Polymer Brush Deposition

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