A New Route to Zero-Barrier Metal Source/Drain MOSFETs

Connelly, Daniel; Faulkner, C.; Grupp, D. E.; Harris, James S.

doi:10.1109/tnano.2003.820774

Cited by 122 publications

(88 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Over the years, various attempts have been made to lower the SBH at silicon-silicide interfaces to improve the performance of SB-MOSFETs by, for example, dopant segregation, 4 inserting an ultrathin insulator at the interface, 5,6 introducing organic molecules 7 or defects at the interface, 8 and tuning the metal work function using a capping layer or dopant-induced strain. [9][10][11][12] The introduction of appropriate dopants at the silicide-silicon interface, e.g., B for PtSi and As for ErSi, known as dopant segregation, 4 has been successfully implemented.…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, it is difficult to implement in sub-20 nm devices. An inserted ultrathin insulator was able to lower the SBH because it depended on the Fermi level, 5,6 but sufficiently low SBH has never been achieved so far. We suggest that SBH can be lowered by uniaxial strain applied at both the channel and the source/drain and that therefore, the strain engineering is applicable for higher-performing SB-MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation

et al. 2015

View full text Add to dashboard Cite

We show, using density functional theory (DFT) calculations, that the Schottky barrier height (SBH) at the PtSi/Si interface can be lowered by uniaxial strain applied not only on Si but also on PtSi. The strain was applied to the (001) direction of Si and PtSi, which is normal for the interface. The SBH of the hole is lowered by 0.08 eV under 2% of tensile strain on Si and by 0.09 eV under 4 % of compressive strain on PtSi. Because the SBH at PtSi/Si contact is approximately 0.2 eV, this amount of reduction can significantly lower the resistance of the PtSi/Si contact; thus applying uniaxial strain on both PtSi and Si possibly enhances the performance of Schottky barrier field effect transistors. Theoretical models of SB formation and conventional structure model are evaluated. It is found that Pt penetration into Si stabilizes the interface and lowers the SBH by approximately 0.1 eV from the bulk-terminated interface model, which implies that conventionally used bulk-terminated interface models have significant errors. Among the theoretical models of SB formation, the model of strong Fermi level pining adequately explains the electron transfer phenomena and SBH, but it has limited ability to explain SBH changes induced by changes of interface structure.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Silicide source/drain (S/D) Schottky barrier field-effect transistors (SBFETs) are promising candidates for sub-32nm CMOS technology [1][2][3][4], as the silicide S/D can provide abrupt junctions together with lower serial resistance as compared to conventional doped S/D junctions. One of the key challenges in SBFETs is to obtain a low Schottky barrier height (SBH) at the silicide-channel junction [2]- [3].…”

Section: Introductionmentioning

confidence: 99%

“…One of the key challenges in SBFETs is to obtain a low Schottky barrier height (SBH) at the silicide-channel junction [2]- [3]. PtSi/YbSi 1+x were considered to be among the best silicide materials for p-/ n-SBFETs application, due to their relative low hole/ electron SBH [4].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs

Lousberg

Hónɡ

Froment

et al. 2006

2006 European Solid-State Device Research Conference

View full text Add to dashboard Cite

Abstract-In this paper, we study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. We demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n-& p-SOI SBFETs performance.

show abstract