Articles you may be interested inImpact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions Appl. Phys. Lett. 99, 253504 (2011); 10.1063/1.3666779Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor fieldeffect-transistor application By imposing an ultrathin insulator between low-work function metals and silicon, the Schottky barrier of the junction can be substantially reduced, decreasing junction resistance. With this approach, low-Schottky-barrier metal source/drain ͑S/D͒ transistors with Mg and Yb as S/D metals are demonstrated.

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