A New Solution for Minority-Carrier Injection into the Heavily Doped Emitter of Silicon Devices

Cong, H. Van

doi:10.1002/(sici)1521-396x(199902)171:2<631::aid-pssa631>3.0.co;2-#

Cited by 9 publications

(15 citation statements)

References 27 publications

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“…Moreover, Equation (18) indicates that, for a given N and with increasing r * , μ decreases, since ε(r * ) decreases as seen in Table 1, being due to the d-size effect, in good accordance with that observed by Logan et al [9]. Further, from Equations (5,8,9,15,18), we can define the following minority-hole transport parameter F as [22,25]:…”

Section: Heavily Doped N-type Emitter-region Parameterssupporting

confidence: 80%

“…being reduced to the result obtained by Slotbottom and de Graaff [3,16], as T=300 K and r = r ' , and τ (N ) is the minority-electron lifetime, computed by [16,25]:…”

Section: Lightly Doped P-type Base-region Parametersmentioning

confidence: 99%

“…is the "effective doping density" [8] and the ABGN is determined in Equation 9for our ΔE -result or in Equation 15for our approximate ΔE (¢ *.¡ƒ) -one. Furthermore, the minority-hole length, L (N, T, r * , g ) = Áτ × D , τ being the minority-hole lifetime, can be determined by [22,25]:…”

Section: Heavily Doped N-type Emitter-region Parametersmentioning

confidence: 99%

“…Then, under low-level injection, in the absence of external generation, and for the steady-state case, we can define the minority-hole density by: (26) and a normalized excess minority-hole density [or a relative deviation between p(x) and p (x)] by [22,25]: (27) which must verify the two following boundary conditions proposed by Shockley as [2]:…”

Section: Minority-hole Saturation Current Densitymentioning

confidence: 99%

See 3 more Smart Citations

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Cong¹,

Blaise²,

Henri‐Rousseau³

2019

AJMP

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The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density J Eo (J Bo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n +-p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: J o ≡J Eo + J Bo , were investigated. For that, we used an effective Gaussian donor-density profile to determine J Eo , and an empirical method of two points to investigate the ideality factor n, short circuit current density J sc , fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage V oc , giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. So, in the completely transparent and heavily doped (P-Si) emitter region, CTHD(P-Si)ER, our obtained J Eo-results were accurate within 1.78%. This accurate expression for J Eo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (P-Si) ER and of lightly doped (B-Si) base region, LD(B-Si)BR, we obtained the precisions of the order of 8.1% for J sc , 7.1% for FF, and 5% for η, suggesting thus an accuracy of J Bo (≤ 8.1%). Further, in the PCs of completely opaque and heavily doped (S-Si) emitter region, COHD(S-Si)ER, and of lightly doped (acceptor-Si) base region, LD(acceptor-Si)BR, our limiting η-results are equal to: 27.77%,…, 31.55%, according to the E gi-values equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)-Si base regions, respectively, being due to the acceptor-size effect. Furthermore, in the PCs of CTHD (donor-Si) ER and of LD(Tl-Si)BR, our maximal η-values are equal to: 24.28%,…, 31.51%, according to the E gi-values equal to: 1.11eV ,…, 1.70eV, given in various (Sb,…, S)-Si emitter regions, respectively, being due to the donorsize effect. It should be noted that these obtained highest η-values are found to be almost equal, as: 31.51%% 31.55%, coming from the fact that the two obtained limiting J-values are almost the same.

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Section: Heavily Doped N-type Emitter-region Parameterssupporting

confidence: 80%

“…being reduced to the result obtained by Slotbottom and de Graaff [3,16], as T=300 K and r = r ' , and τ (N ) is the minority-electron lifetime, computed by [16,25]:…”

Section: Lightly Doped P-type Base-region Parametersmentioning

confidence: 99%

Section: Heavily Doped N-type Emitter-region Parametersmentioning

confidence: 99%

Section: Minority-hole Saturation Current Densitymentioning

confidence: 99%

See 2 more Smart Citations

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Cong¹,

Blaise²,

Henri‐Rousseau³

2019

AJMP

View full text Add to dashboard Cite

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“…

In two new single n + (p + ) − p(n) X(x)-alloy junction solar cells at 300 K, [X(x)≡ CdTe 1−x S x , CdTe 1−x Se x ],0 ≤ x ≤ 1, by basing on the same physical model-and-treatment method, as used in our recent works [1,2], and also other works [3][4][5][6][7][8][9][10][11], some important results, obtained in the present work, are reported in the following.As noted in Tables 2.1, 3.1, 4.1 and 5.1, the dark carrier-minority saturation current density 𝐽𝐽 𝑜𝑜𝑜𝑜(𝑜𝑜𝑜𝑜𝑜𝑜) decreases slightly with increasing 𝑟𝑟 𝑑𝑑(𝑎𝑎) -radius for given x, and decreases strongly with increasing x, for given 𝑟𝑟 𝑑𝑑(𝑎𝑎) -radius. Further, as discussed in Eq.

…”

mentioning

confidence: 84%

34.151 % (33.93 %) - Maximal Efficiencies investigated in New n+(p+) - p(n) CdTe1-xSx, CdTe1-xSex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures

Van Cong

2024

ejaset

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(14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline (\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\

Van Cong

2023

Physics

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In the n + (p + ) − p(n) crystalline ( X ≡Ge, GaSb, CdTe or CdSe)-junction solar cells at 300K, due to the effects of impurity size, temperature, heavy doping, and photovoltaic conversion, we show that, with an increasing donor (acceptor)-radius r d a , both the relative dielectric constant and photovoltaic conversion factor decrease, and the intrinsic band gap (IBG) increases, according to the increase in photovoltaic efficiency, as observed in Tables 1-5, being in good accordance with an important result obtained by Shockley and Queisser [10], stating that for an increasing IBG the photovoltaic efficiency increases.Further, for highest values of r d a , the limiting highest efficiencies are found to be given in Tables 2.2, 3.2, 4.2, and 5.2, as: 14.82 %, 12.16 %, 26.55 %, and 23.69 %,), obtained in such n + (p + ) − p(n) crystalline (Ge, GaSb, CdTe, or CdSe)-junction solar cells at the open circuit voltage =0.33 V, 0.355 V, 0.82 V, and 0.89 V, respectively, and at T=300 K.Furthermore, from the well-known Carnot-efficiency theorem, as given in Eq. ( 46), being obtained from the second principle of the thermodynamics, and from the above results of limiting highest efficiencies, the corresponding highest hot reservoir temperatures, T H =352.2 K, 341.5 K, 408.4 K, and 393.1 K, respectively. Thus, as noted above, η max. and T H both increase with an increasing IBG, for each (X≡Ge, GaSb, CdTe, or CdSe)-crystal at T=300 K≡ T C .

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A New Solution for Minority-Carrier Injection into the Heavily Doped Emitter of Silicon Devices

Cited by 9 publications

References 27 publications

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

34.151 % (33.93 %) - Maximal Efficiencies investigated in New n+(p+) - p(n) CdTe1-xSx, CdTe1-xSex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures

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A New Solution for Minority-Carrier Injection into the Heavily Doped Emitter of Silicon Devices

Cited by 9 publications

References 27 publications

Best Performance of n&lt;sup&gt;+&lt;/sup&gt; - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Best Performance of n&lt;sup&gt;+&lt;/sup&gt; - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

34.151 % (33.93 %) - Maximal Efficiencies investigated in New n+(p+) - p(n) CdTe1-xSx, CdTe1-xSex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures

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Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I