A New Technique for Antimony Diffusion into Silicon

Nanba, M.

doi:10.1149/1.2127433

Cited by 10 publications

(8 citation statements)

References 8 publications

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“…Results described above are too complex to discuss briefly. A similar phenomenon is not seen anywhere but in oar reports (6,9).…”

Section: Discussionsupporting

confidence: 57%

“…Furthermore, in the diffusion described (6,9), the only usable material is A12Os. However, it is expected that some other material might also prove usable, as shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

“…and ~s c be defined as the sheet conductance obtained by the new process and by conventional processes, respectively (6). The value ~, --~s c should reveal the effect on Sb diffusion obtained by the new technique.…”

Section: Dependence On the Diffusion Temperature--let ~S"mentioning

confidence: 99%

“…This suggests that the Sb glass-formation mechanism obtained by the new process differs entirely from that obtained by conventional processes. The Rutherford backscattering (RBS) spectra for the diffusion wafer at 0.65 m/o of source concentration has already been repormd (6). Sb yield in a glass layer obtained by this technique was about 10% of that obtained by conventional techniques.…”

mentioning

confidence: 97%

“…Recently, a new Sb-diffusion technique that avoids both these problems has been presente,d (6)(7)(8). This new technique uses auxiliary silicon wafers lapped with AlcOa powder.…”

mentioning

confidence: 99%

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High Concentration Sb Diffusion into Silicon Using Auxiliary Wafers and Optimum Conditions

Nanba

Kozuka

Nakamura

1984

J. Electrochem. Soc.

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The optimum condition for Sb diffusion into silicon using a silicon wafer lapped with AleO~ powder and a sapphire wafer as an auxiliary wafer has been determined. To obtain higher Sb concentrations-as high as the solid solubility Of Sb into sillcon-the SbzO3 vaporized source concentration has to be kept over 0.4 tool percent (m/o) during diffusion. A nonoxidizing atmosphere and a small distance between the diffusion and auxiliary wafers are desirable. Although sheet conductance obtained by utilizing a lapped silicon wafer depends on the number of uses it has, that obtaind by the sapphire wafer is independent of use number. When A1~O3 is present on the diffusion wafer beforehand, the diffusion concentration increase is similar to that with the auxiliary wafers with AlsO3 on their surface. The process presented here has no effect on phosphorus impurity diffusion. The solubility change of elemental Sb in the multicomponent glass film grown on the diffusion wafer is presented to explain the higher Sb concentration when A1~O3 is present.

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“…Results described above are too complex to discuss briefly. A similar phenomenon is not seen anywhere but in oar reports (6,9).…”

Section: Discussionsupporting

confidence: 57%

“…Furthermore, in the diffusion described (6,9), the only usable material is A12Os. However, it is expected that some other material might also prove usable, as shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

Section: Dependence On the Diffusion Temperature--let ~S"mentioning

confidence: 99%

mentioning

confidence: 97%

“…Recently, a new Sb-diffusion technique that avoids both these problems has been presente,d (6)(7)(8). This new technique uses auxiliary silicon wafers lapped with AlcOa powder.…”

mentioning

confidence: 99%

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