A New Technique of Forming Thin Free Standing Single‐Crystal Films

Tanielian, M.; Blackstone, S.; Lajos, R.

doi:10.1149/1.2113872

Cited by 23 publications

(13 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 1986, Tanielian et al [6] proposed a method to produce foils by sputtering deposition of a layer of metal onto a single crystal substrate. Then, the assembly is treated to stress the metal layer which then can peel off with a part of the single crystal substrate still attached.…”

Section: Introductionmentioning

confidence: 99%

Thermo-mechanical and fracture properties in single-crystal silicon

et al. 2012

View full text Add to dashboard Cite

International audienceSingle-crystal silicon is extensively used in the semiconductor industry. Even though most of the steps during processing involve somehow thermo-mechanical treatment of silicon, we will focus on two main domains where these properties play a major role: cleaving techniques used to obtain a thin silicon layer for photovoltaic applications and MEMS. The evolution and validation of these new processes often rely on numerical simulations. The accuracy of these simulations, however, requires accurate input data for a wide temperature range. Numerous studies have been performed, and most of the needed parameters are generally available in the literature, but unfortunately, some discrepancies are observed in terms of measured data regarding fracture mechanics parameters. The aim of this article is to gather all these data and discuss the validity of these properties between room temperature and 1273 K. Particular attention is given to silicon fracture properties depending on crystallographic orientations, and to the brittle-ductile temperature transition which can strongly affect the quality of silicon layers

show abstract

Section: Introductionmentioning

confidence: 99%

Thermo-mechanical and fracture properties in single-crystal silicon

et al. 2012

View full text Add to dashboard Cite

show abstract

“…Tanielian first described the stress‐induced stripping technology of monocrystalline Si thin films in 1985. [ 62 ] Several techniques can be used to deposit the metallic layers, including screen‐printed metal paste, [ 51 ] electrochemical deposition, [ 36 ] thermal evaporation, [ 53 ] and sputter‐deposition. [ 63 ] The method consists of four steps: 1) depositing a stress‐inducing layer on a Si wafer, 2) heat‐treating the stress‐induced layer, 3) crack initialization and detach the thin Si layer, and 4) chemical cleaning to remove the stress‐inducing layer.…”

Section: “Top‐down” Approachesmentioning

confidence: 99%

Fabrication of Crystalline Si Thin Films for Photovoltaics

Shen

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Crystalline Si (c‐Si) thin films have been widely studied for their application to solar cells and flexible electronics. However, their application at large scale is limited by their fabrication process. As reviewed in this paper, many approaches have been studied, but only some of them have been made into large‐scale industrial production. The standard wire sawing of Si ingots cannot be scaled down to produce thin c‐Si wafers and films due to the brittle nature of c‐Si material, the resulting significant thickness variations, and the waste of material. Therefore, techniques based on the kerf‐less processes including “top‐down” and “bottom‐up” approaches have been developed in recent decades. In this review, photovoltaic applications of thin c‐Si wafers with thicknesses ranging from 50 μm down to 1 μm are presented first. Then, methods to fabricate c‐Si thin films based on both approaches are detailed, including slim‐cut, “smart‐cut,” epi‐free, as well as various growth processes such as molecular beam epitaxy, liquid phase epitaxy, ion beam, and chemical vapor deposition processes at a wide range of growth temperatures, from 1000 °C down to 150 °C. The advantages and disadvantages of these methods are presented and compared.

show abstract

“…The lift-off of a thin crystalline silicon film without the need of a weakened release layer was firstly described by Tanielian in 1985 8 and recently revisited. [9][10][11][12][13] Here, an adhesive stressor layer on top of a thicker silicon substrate is used to induce the exfoliation of a thin substrate portion.…”

Section: Introductionmentioning

confidence: 99%

“…Different stressor layer materials have been used for the exfoliation of thin foils of crystalline Si so far, including sputtered or electrodeposited Ni [10][11][12] and Ni-Cr, 8 screen-printed metal paste, 9 glued metal stripes, 20 and polymers. 17,21 Within this paper, we present exfoliated silicon foils that were produced using an evaporated Al film as stressor layer.…”

Section: Introductionmentioning

confidence: 99%

Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells

et al. 2015

View full text Add to dashboard Cite

We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive the exfoliation process and can be maintained as a rear contacting layer in the solar cell after exfoliation. The 50-70 lm thick exfoliated Si layers show effective minority carrier lifetimes around 180 ls with diffusion lengths of 10 times the layer thickness. We analyze the thermo-mechanical properties of the Al layer by x-ray diffraction analysis and investigate its influence on the exfoliation process. We evaluate the approach for the implementation into solar cell production by determining processing limits and estimating cost advantages of a possible solar cell design route. The Al-Si bilayers are mechanically stable under processing conditions and exhibit a moderate cost savings potential of 3-36% compared to other c-Si cell concepts.

show abstract

A New Technique of Forming Thin Free Standing Single‐Crystal Films

Abstract: not Available.

Cited by 23 publications

References 0 publications

Thermo-mechanical and fracture properties in single-crystal silicon

Thermo-mechanical and fracture properties in single-crystal silicon

Fabrication of Crystalline Si Thin Films for Photovoltaics

Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells

Contact Info

Product

Resources

About