A new technology process for packaged millimeter-wave Si-IMPATT diodes

Luschas, M.; Wollitzer, M.; Luy, J.-F.

doi:10.1109/icimw.2000.893039

25th International Conference on Infrared and Millimeter Waves (Cat. No.00EX442)

DOI: 10.1109/icimw.2000.893039

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A new technology process for packaged millimeter-wave Si-IMPATT diodes

M. Luschas¹,

M. Wollitzer²,

J.-F. Luy³

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Measurement results of packaged millimeter-wave silicon IMPATT diodes

Luschas¹,

Judaschke²,

Luy³

Twenty Seventh International Conference on Infrared and Millimeter Waves

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Recently, a new technology process for manufacturing packaged millimeter-wave silicon IMPATT diodes has been introduced [I, 21. Detailed measurement and simulation results for these devices operating in the D-band frequency range are compared here. Results are obtained in rectangular, reduced height waveguide resonators. CW RFoutput power of more than 100 mW at 135 GHz and 50 mW at 150 GHz are reported.

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Measurement results of packaged millimeter-wave silicon IMPATT diodes

Luschas¹,

Judaschke²,

Luy³

Twenty Seventh International Conference on Infrared and Millimeter Waves

View full text Add to dashboard Cite

show abstract

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A new technology process for packaged millimeter-wave Si-IMPATT diodes

Cited by 1 publication

References 2 publications

Measurement results of packaged millimeter-wave silicon IMPATT diodes

Measurement results of packaged millimeter-wave silicon IMPATT diodes

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