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I 2 Absrracr -The integration of IMPATT diodes and theirtypically have diameters of a few 10 p, is tricky. housing in a single technology process is discussed in thisMerging the fabrication of the active element with that of paper. The device is designed lo the housing in one technology process eliminates the need reliability and reproducibility compared to conventional benm-lead diodes with quartz ring housing, In step, for Severa1 bonding during manufacturing. Fewer the diode with its housing is bonded onto a diamond heat manual work steps results in better reliability, better sink. The device can be employed both in a waveguide reproducibility and faster, cheaper production of devices. resonator and in a planar oscillator circuit Resuits presented here are obtained in B rectangular, reduced height waveguide resonator. RF-autput power levels of more than 100 mW at 135 GHz and 45 mW st 150 GHz are reported. DIODE DESlGNThe design goal is to maximize the negative resistance of the active element in the D-band frequency range toThe DC-current density which corresponds to the DC-

Recently, a new technology process for manufacturing packaged millimeter-wave silicon IMPATT diodes has been introduced [I, 21. Detailed measurement and simulation results for these devices operating in the D-band frequency range are compared here. Results are obtained in rectangular, reduced height waveguide resonators. CW RFoutput power of more than 100 mW at 135 GHz and 50 mW at 150 GHz are reported.

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