Simulation and measurement results of 150 GHz integrated silicon IMPATT diodes

Abstract

I 2 Absrracr -The integration of IMPATT diodes and theirtypically have diameters of a few 10 p, is tricky. housing in a single technology process is discussed in thisMerging the fabrication of the active element with that of paper. The device is designed lo the housing in one technology process eliminates the need reliability and reproducibility compared to conventional benm-lead diodes with quartz ring housing, In step, for Severa1 bonding during manufacturing. Fewer the diode with its housing is bonded onto a diamond heat manual work steps results in better reliability, better sink. The device can be employed both in a waveguide reproducibility and faster, cheaper production of devices. resonator and in a planar oscillator circuit Resuits presented here are obtained in B rectangular, reduced height waveguide resonator. RF-autput power levels of more than 100 mW at 135 GHz and 45 mW st 150 GHz are reported. DIODE DESlGNThe design goal is to maximize the negative resistance of the active element in the D-band frequency range toThe DC-current density which corresponds to the DC-

A JL-SDR-IMPATT Device with Improved Efficiency

“…At different millimeter-wave window frequencies, Si and GaAs IMPATTs are already established as efficient and powerful sources [12][13][14]. For generation of RF power at THz frequencies, the potentiality of wide band-gap materials (GaN,SiC) has been reported in the recent years.…”

Monolithically Integrated Silicon-IMPATT Oscillator at 93 GHz

“…This leads to a very low production yield and prevents cost effective realization. An advancement in integrating and housing Impatt diodes is presented in [8]. Luschas replaced the sensitive beam leads by a thick metal layer.…”